JPS5674896A - Read only memory element - Google Patents

Read only memory element

Info

Publication number
JPS5674896A
JPS5674896A JP15072779A JP15072779A JPS5674896A JP S5674896 A JPS5674896 A JP S5674896A JP 15072779 A JP15072779 A JP 15072779A JP 15072779 A JP15072779 A JP 15072779A JP S5674896 A JPS5674896 A JP S5674896A
Authority
JP
Japan
Prior art keywords
gate
electrodes
electrode
condition
type silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15072779A
Other languages
Japanese (ja)
Inventor
Yoshihisa Mizutani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15072779A priority Critical patent/JPS5674896A/en
Publication of JPS5674896A publication Critical patent/JPS5674896A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To form ROM elements by differentiating desired gate areas of deep depression transistor from other gate areas. CONSTITUTION:For the gate area (gate electrode), for example for electrodes G4 and G7 the P type silicon gate, and for the other gate electrodes the N type silicon gate are used. When a voltage which is higher than threshold voltage VTH at the N type silicon gate is applied on gate electrodes Go-Gn, these transistors turn on condition in total. Then, when the gate voltage of any of these gate electrode is brought down below VTH, the transistors maintain on condition in total in case where the electrode is G4 or G7, but the transistors turn off condition where the electrode is other gate electrodes. Therefore, by scanning electrodes Go-Gn successively and detecting locations of G4 and G7, this transistor can fulfill its function as an ROM.
JP15072779A 1979-11-22 1979-11-22 Read only memory element Pending JPS5674896A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15072779A JPS5674896A (en) 1979-11-22 1979-11-22 Read only memory element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15072779A JPS5674896A (en) 1979-11-22 1979-11-22 Read only memory element

Publications (1)

Publication Number Publication Date
JPS5674896A true JPS5674896A (en) 1981-06-20

Family

ID=15503083

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15072779A Pending JPS5674896A (en) 1979-11-22 1979-11-22 Read only memory element

Country Status (1)

Country Link
JP (1) JPS5674896A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008008154A (en) * 2006-06-27 2008-01-17 Hitachi Plant Technologies Ltd Double suction centrifugal pump

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008008154A (en) * 2006-06-27 2008-01-17 Hitachi Plant Technologies Ltd Double suction centrifugal pump

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