JPS556857A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS556857A
JPS556857A JP7901378A JP7901378A JPS556857A JP S556857 A JPS556857 A JP S556857A JP 7901378 A JP7901378 A JP 7901378A JP 7901378 A JP7901378 A JP 7901378A JP S556857 A JPS556857 A JP S556857A
Authority
JP
Japan
Prior art keywords
threshold voltage
potential
mos
fet
conducting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7901378A
Other languages
Japanese (ja)
Other versions
JPS627713B2 (en
Inventor
Masahiko Yoshimoto
Kenji Anami
Osamu Tomizawa
Masao Nakaya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7901378A priority Critical patent/JPS556857A/en
Publication of JPS556857A publication Critical patent/JPS556857A/en
Publication of JPS627713B2 publication Critical patent/JPS627713B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)

Abstract

PURPOSE: To continually keep the potential of input signals for conducting a MOS.FET constant, by forming a bias circuit so that bias value change in the same manner as the variation of threshold voltage.
CONSTITUTION: The potential of a joint 19 is brought to potential near threshold voltage from the I-V characteristics of a MOS.FET 17, which short-circuits a gate and a drain, and a load curve of a resistance 18. The potential is divided by means of resistances 15 and 16. A gate of a MOS.FET 12 has voltage lower than threshold voltage, and is biased to adequate value near approximate threshold voltage. When threshold voltage changes from fixed value, the potential of the joint 19 also alters in response to the change of the threshold voltage. Thus, the potential of input signals for conducting the MOS.FET 12 does not depend upon the dispersion of threshold voltage.
COPYRIGHT: (C)1980,JPO&Japio
JP7901378A 1978-06-28 1978-06-28 Semiconductor integrated circuit Granted JPS556857A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7901378A JPS556857A (en) 1978-06-28 1978-06-28 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7901378A JPS556857A (en) 1978-06-28 1978-06-28 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS556857A true JPS556857A (en) 1980-01-18
JPS627713B2 JPS627713B2 (en) 1987-02-18

Family

ID=13678054

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7901378A Granted JPS556857A (en) 1978-06-28 1978-06-28 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS556857A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0818080A1 (en) * 1995-03-27 1998-01-14 General DataComm, Inc. Output characteristics stabilization of cmos devices

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4610654Y1 (en) * 1968-03-27 1971-04-14

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4610654Y1 (en) * 1968-03-27 1971-04-14

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0818080A1 (en) * 1995-03-27 1998-01-14 General DataComm, Inc. Output characteristics stabilization of cmos devices
EP0818080A4 (en) * 1995-03-27 1998-10-28 Gen Datacomm Ind Inc Output characteristics stabilization of cmos devices

Also Published As

Publication number Publication date
JPS627713B2 (en) 1987-02-18

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