JPS56138957A - Electrostatic induction type semiconductor device - Google Patents

Electrostatic induction type semiconductor device

Info

Publication number
JPS56138957A
JPS56138957A JP3293281A JP3293281A JPS56138957A JP S56138957 A JPS56138957 A JP S56138957A JP 3293281 A JP3293281 A JP 3293281A JP 3293281 A JP3293281 A JP 3293281A JP S56138957 A JPS56138957 A JP S56138957A
Authority
JP
Japan
Prior art keywords
gate
drain
source
voltage
induction type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3293281A
Other languages
Japanese (ja)
Other versions
JPH0468792B2 (en
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP3293281A priority Critical patent/JPS56138957A/en
Publication of JPS56138957A publication Critical patent/JPS56138957A/en
Publication of JPH0468792B2 publication Critical patent/JPH0468792B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]

Abstract

PURPOSE:To abruptly increase drain current with the voltage between predetermined source and drain by connecting the source or drain to the gate of a static induction type transistor of nonconducted state at the same potential as the gate and the source. CONSTITUTION:A static induction type transistor of substantially nonconducted state in the state of maintining the gate and the source at the same potential can be conducted by forwardly biasing the gate or the drain at higher than predetermined value. When the gate and the source of the static induction transistor rising the drain current in unsaturated state of the drain current due to the increase of the drain voltage, the characteristics for zero gate bias can be obtained. When the gate and the drain are connected, the drain voltage becomes gate voltage as it is. accordingly, the two-terminal element rising its drain current abruptly with predetermined voltage can be formed.
JP3293281A 1981-03-07 1981-03-07 Electrostatic induction type semiconductor device Granted JPS56138957A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3293281A JPS56138957A (en) 1981-03-07 1981-03-07 Electrostatic induction type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3293281A JPS56138957A (en) 1981-03-07 1981-03-07 Electrostatic induction type semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP52005093A Division JPS6048933B2 (en) 1977-01-19 1977-01-19 integrated circuit

Publications (2)

Publication Number Publication Date
JPS56138957A true JPS56138957A (en) 1981-10-29
JPH0468792B2 JPH0468792B2 (en) 1992-11-04

Family

ID=12372691

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3293281A Granted JPS56138957A (en) 1981-03-07 1981-03-07 Electrostatic induction type semiconductor device

Country Status (1)

Country Link
JP (1) JPS56138957A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961190A (en) * 1982-09-17 1984-04-07 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン Semiconductor structure
JPH0637335A (en) * 1992-07-15 1994-02-10 Naoshige Tamamushi Static induction diode having buried structure or cut-in structure

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5390774A (en) * 1977-01-19 1978-08-09 Handotai Kenkyu Shinkokai Ic

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5390774A (en) * 1977-01-19 1978-08-09 Handotai Kenkyu Shinkokai Ic

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961190A (en) * 1982-09-17 1984-04-07 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン Semiconductor structure
JPH0213928B2 (en) * 1982-09-17 1990-04-05 Intaanashonaru Bijinesu Mashiinzu Corp
JPH0637335A (en) * 1992-07-15 1994-02-10 Naoshige Tamamushi Static induction diode having buried structure or cut-in structure

Also Published As

Publication number Publication date
JPH0468792B2 (en) 1992-11-04

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