JPS5670658A - Semiconductor capacitor - Google Patents

Semiconductor capacitor

Info

Publication number
JPS5670658A
JPS5670658A JP14905179A JP14905179A JPS5670658A JP S5670658 A JPS5670658 A JP S5670658A JP 14905179 A JP14905179 A JP 14905179A JP 14905179 A JP14905179 A JP 14905179A JP S5670658 A JPS5670658 A JP S5670658A
Authority
JP
Japan
Prior art keywords
oxide film
film
preventing
dynamic memory
alpha rays
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14905179A
Other languages
Japanese (ja)
Inventor
Masahiko Denda
Natsuo Tsubouchi
Shinichi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14905179A priority Critical patent/JPS5670658A/en
Publication of JPS5670658A publication Critical patent/JPS5670658A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a dynamic memory preventing software error occurred due to alpha rays by using a polycrystalline semiconductor film formed through an insulating film on a semiconductor substrate as an electrode layer of an MOS capacitor. CONSTITUTION:An oxide film 8 is selectively formed on the surface of a p type substrate 6, is coated with a polycrystlline silicon film 7, and the film 7 is patterned. Then, it is oxidized with oxidation resistant mask, and an isolating silicon oxide film 9 is formed thereon. Thereafter, gate oxide film 1, polysilicon films 2, 3, gate oxide film 4 and n<+> type region 5 are formed by an ordinary dynamic memory forming process. Since the memory capacitor is thus surrounded by the oxide film if electron and hole pair are formed due to the irradiation of the alpha rays, it is not affected by the interruption of the oxide film, thereby preventing the occurrence of the software error.
JP14905179A 1979-11-14 1979-11-14 Semiconductor capacitor Pending JPS5670658A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14905179A JPS5670658A (en) 1979-11-14 1979-11-14 Semiconductor capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14905179A JPS5670658A (en) 1979-11-14 1979-11-14 Semiconductor capacitor

Publications (1)

Publication Number Publication Date
JPS5670658A true JPS5670658A (en) 1981-06-12

Family

ID=15466572

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14905179A Pending JPS5670658A (en) 1979-11-14 1979-11-14 Semiconductor capacitor

Country Status (1)

Country Link
JP (1) JPS5670658A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5454587A (en) * 1977-10-08 1979-04-28 Cho Lsi Gijutsu Kenkyu Kumiai Semiconductor
JPS561559A (en) * 1979-06-19 1981-01-09 Fujitsu Ltd One-transistor type dynamic memory cell

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5454587A (en) * 1977-10-08 1979-04-28 Cho Lsi Gijutsu Kenkyu Kumiai Semiconductor
JPS561559A (en) * 1979-06-19 1981-01-09 Fujitsu Ltd One-transistor type dynamic memory cell

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