JPS5670630A - Manufacture of compound semiconductor by gas phase epitaxial growth - Google Patents

Manufacture of compound semiconductor by gas phase epitaxial growth

Info

Publication number
JPS5670630A
JPS5670630A JP14727879A JP14727879A JPS5670630A JP S5670630 A JPS5670630 A JP S5670630A JP 14727879 A JP14727879 A JP 14727879A JP 14727879 A JP14727879 A JP 14727879A JP S5670630 A JPS5670630 A JP S5670630A
Authority
JP
Japan
Prior art keywords
layer
growing
gas phase
hcl
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14727879A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6222443B2 (enrdf_load_stackoverflow
Inventor
Katsunori Maeda
Yoshinobu Tsujikawa
Hideki Oikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Original Assignee
Mitsubishi Monsanto Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Monsanto Chemical Co filed Critical Mitsubishi Monsanto Chemical Co
Priority to JP14727879A priority Critical patent/JPS5670630A/ja
Publication of JPS5670630A publication Critical patent/JPS5670630A/ja
Publication of JPS6222443B2 publication Critical patent/JPS6222443B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
JP14727879A 1979-11-14 1979-11-14 Manufacture of compound semiconductor by gas phase epitaxial growth Granted JPS5670630A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14727879A JPS5670630A (en) 1979-11-14 1979-11-14 Manufacture of compound semiconductor by gas phase epitaxial growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14727879A JPS5670630A (en) 1979-11-14 1979-11-14 Manufacture of compound semiconductor by gas phase epitaxial growth

Publications (2)

Publication Number Publication Date
JPS5670630A true JPS5670630A (en) 1981-06-12
JPS6222443B2 JPS6222443B2 (enrdf_load_stackoverflow) 1987-05-18

Family

ID=15426587

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14727879A Granted JPS5670630A (en) 1979-11-14 1979-11-14 Manufacture of compound semiconductor by gas phase epitaxial growth

Country Status (1)

Country Link
JP (1) JPS5670630A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0573270A3 (enrdf_load_stackoverflow) * 1992-06-02 1994-02-16 Mitsubishi Chem Ind

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915991A (enrdf_load_stackoverflow) * 1972-06-05 1974-02-12

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915991A (enrdf_load_stackoverflow) * 1972-06-05 1974-02-12

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0573270A3 (enrdf_load_stackoverflow) * 1992-06-02 1994-02-16 Mitsubishi Chem Ind

Also Published As

Publication number Publication date
JPS6222443B2 (enrdf_load_stackoverflow) 1987-05-18

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