JPS5666032A - Fine processing - Google Patents

Fine processing

Info

Publication number
JPS5666032A
JPS5666032A JP14117679A JP14117679A JPS5666032A JP S5666032 A JPS5666032 A JP S5666032A JP 14117679 A JP14117679 A JP 14117679A JP 14117679 A JP14117679 A JP 14117679A JP S5666032 A JPS5666032 A JP S5666032A
Authority
JP
Japan
Prior art keywords
film
etching
work
permit
employing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14117679A
Other languages
Japanese (ja)
Other versions
JPS587056B2 (en
Inventor
Eiji Yamanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokin Corp
Original Assignee
Tohoku Metal Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tohoku Metal Industries Ltd filed Critical Tohoku Metal Industries Ltd
Priority to JP54141176A priority Critical patent/JPS587056B2/en
Publication of JPS5666032A publication Critical patent/JPS5666032A/en
Publication of JPS587056B2 publication Critical patent/JPS587056B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To permit the processing of the work extent which has been deemed hard to attain by a ultraviolet-ray exposure method, without using expensive devices by interposing a polyimide resin film between the work and photoresist films. CONSTITUTION:A polyimide resin film 3 is formed on an SiO2 film 2 and a pattern consisting of photoresist films 4 is selectively formed on the film 3. Next, the film 3 is selectively removed by employing the films 4 as masks. Next, the removal of etching is selectively applied to the film 2 by employing the film 3 pattern as a mask. When etching is applied, polyimide resins being used in general have a feature that etching proceeds to the inside of opening of width W1 with an angle to a vertical plane in the direction of etching depth. Therefore, it is possible to permit the minimum value of the opening width of the work at 1.0mum or below by applying such a method.
JP54141176A 1979-11-02 1979-11-02 Microfabrication method Expired JPS587056B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54141176A JPS587056B2 (en) 1979-11-02 1979-11-02 Microfabrication method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54141176A JPS587056B2 (en) 1979-11-02 1979-11-02 Microfabrication method

Publications (2)

Publication Number Publication Date
JPS5666032A true JPS5666032A (en) 1981-06-04
JPS587056B2 JPS587056B2 (en) 1983-02-08

Family

ID=15285903

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54141176A Expired JPS587056B2 (en) 1979-11-02 1979-11-02 Microfabrication method

Country Status (1)

Country Link
JP (1) JPS587056B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9893094B2 (en) 2001-08-10 2018-02-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4996157A (en) * 1972-12-20 1974-09-11
JPS5138661A (en) * 1974-09-30 1976-03-31 Hitachi Ltd TASOHAISENNIOKERUBEBERUETSUCHINGU HOHO

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4996157A (en) * 1972-12-20 1974-09-11
JPS5138661A (en) * 1974-09-30 1976-03-31 Hitachi Ltd TASOHAISENNIOKERUBEBERUETSUCHINGU HOHO

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9893094B2 (en) 2001-08-10 2018-02-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Also Published As

Publication number Publication date
JPS587056B2 (en) 1983-02-08

Similar Documents

Publication Publication Date Title
CA2014285A1 (en) Device fabrication and resulting devices
JPS5748237A (en) Manufacture of 2n doubling pattern
JPS5666032A (en) Fine processing
JPS5259580A (en) Photo etching method
JPS5539646A (en) Ion taper etching
JPS57176040A (en) Preparation of photomask
JPS51118392A (en) Manuforcturing process for semiconductor unit
JPS5339060A (en) Lot number marking method to wafers
JPS57132008A (en) Measuring method for pattern size
JPS57102015A (en) Pattern formation
JPS56167329A (en) Piling joint setting mark to be used in fine processing exposure technology
JPS5635774A (en) Dry etching method
JPS52127173A (en) Pattern formation method
JPS5373075A (en) Treatment method for wafer surface
JPS5666034A (en) Minute processing method
JPS52122477A (en) Processing of thin film patterns
JPS5427367A (en) Manufacture of microwave circuit pattern
JPS5656633A (en) Manufacture of semiconductor element
JPS5673435A (en) Manufacture of semiconductor device
JPS55100552A (en) Photo mask
JPS5381083A (en) Focusing method of projection exposure apparatus
JPS5756929A (en) Contact printing method
JPS6473087A (en) Formation of metallic pattern
JPS5368172A (en) Production of semiconductor device
JPS5330799A (en) Resist exposure