JPS5655061A - Integrated semiconductor device - Google Patents
Integrated semiconductor deviceInfo
- Publication number
- JPS5655061A JPS5655061A JP13002679A JP13002679A JPS5655061A JP S5655061 A JPS5655061 A JP S5655061A JP 13002679 A JP13002679 A JP 13002679A JP 13002679 A JP13002679 A JP 13002679A JP S5655061 A JPS5655061 A JP S5655061A
- Authority
- JP
- Japan
- Prior art keywords
- recessed
- pattern
- wire
- etched
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Element Separation (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To contrive the prevention of stepwise disconnection of a wire in an integrated semiconductor device by forming a configuration that a recessed diffusion pattern does not cross a monocrystalline silicon island region at the region of leading a wire of a functional element, thereby preventing etching of isolated SiO2 layer. CONSTITUTION:A dividing groove is formed by anisotropic etching at a silicon wafer, an isolating SiO2 film 3 is coated by a thermal oxidation on the surface of forming the isolating groove, polycrystalline silicon 5 is grown thereon, then is polished from the side of monocrystalline silicon, and a monocrystalline island region 2 is thus formed. When the SiO2 film is then etched on the surface of the pattern 7 for alleviating the step, the recessed portion is not etched, nor the etching groove is etched. Then, a recessed diffusion pattern 8 is formed, and aluminum wire 11 is led through the region where no extension of the recessed pattern is existed from the contact window 10. Since the wire is led at the portion where the etching groove is not formed in the recessed pattern, the stepwise disconnection can be prevented.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13002679A JPS5655061A (en) | 1979-10-11 | 1979-10-11 | Integrated semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13002679A JPS5655061A (en) | 1979-10-11 | 1979-10-11 | Integrated semiconductor device |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9453786A Division JPS61234054A (en) | 1986-04-25 | 1986-04-25 | Integrated semiconductor device |
| JP9453686A Division JPS61234053A (en) | 1986-04-25 | 1986-04-25 | Integrated semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5655061A true JPS5655061A (en) | 1981-05-15 |
| JPS6148261B2 JPS6148261B2 (en) | 1986-10-23 |
Family
ID=15024313
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13002679A Granted JPS5655061A (en) | 1979-10-11 | 1979-10-11 | Integrated semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5655061A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7681689B2 (en) | 2002-09-02 | 2010-03-23 | Komatsu Ltd. | Vibration damping device and bucket for construction machine |
-
1979
- 1979-10-11 JP JP13002679A patent/JPS5655061A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7681689B2 (en) | 2002-09-02 | 2010-03-23 | Komatsu Ltd. | Vibration damping device and bucket for construction machine |
| US7743881B2 (en) | 2002-09-02 | 2010-06-29 | Komatsu Ltd. | Vibration damping device and bucket for construction machine |
| US8438759B2 (en) | 2002-09-02 | 2013-05-14 | Komatsu, Ltd. | Vibration damping device and bucket for construction machine |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6148261B2 (en) | 1986-10-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1428713A (en) | Method of manufactruing a semiconductor device | |
| GB1449559A (en) | Production of a semiconductor device | |
| JPS5655061A (en) | Integrated semiconductor device | |
| JPS562671A (en) | Manufacture of semiconductor diaphragm | |
| JPS5763842A (en) | Preparation of semiconductor integrated circuit | |
| ES365276A1 (en) | Metal etching process for semiconductor devices | |
| JPS6484724A (en) | Semiconductor device | |
| JPS5742143A (en) | Manufacture of semiconductor device | |
| GB1339384A (en) | Method for the manufacturing of a semiconductor device | |
| JPS56138938A (en) | Manufacture of semiconductor device | |
| JPS5735368A (en) | Manufacture of semiconductor device | |
| JPS6411366A (en) | Manufacture of bipolar semiconductor device | |
| GB1276451A (en) | Semiconductor structure and method for lowering the collector resistance | |
| GB1247329A (en) | Method of making fast switching semiconductive devices with silicon nitride passivation | |
| EP0067738A3 (en) | Method of reducing encroachment in a semiconductor device | |
| JPS57102045A (en) | Manufacture of semiconductor device | |
| JPS6421940A (en) | Manufacture of semiconductor device | |
| JPS6467939A (en) | Formation of isolation of semiconductor device | |
| JPS6451636A (en) | Manufacture of semiconductor integrated circuit | |
| JPS568828A (en) | Manufacture of semiconductor device | |
| JPS5776866A (en) | Manufacture of semiconductor device | |
| JPS5768048A (en) | Semiconductor device and manufacture thereof | |
| JPS5779634A (en) | Manufacture of semiconductor device | |
| JPS5748270A (en) | Semiconductor device | |
| JPS5610945A (en) | Manufacture of semiconductor device |