JPS5654041A - Electron beam exposure device - Google Patents

Electron beam exposure device

Info

Publication number
JPS5654041A
JPS5654041A JP13069079A JP13069079A JPS5654041A JP S5654041 A JPS5654041 A JP S5654041A JP 13069079 A JP13069079 A JP 13069079A JP 13069079 A JP13069079 A JP 13069079A JP S5654041 A JPS5654041 A JP S5654041A
Authority
JP
Japan
Prior art keywords
pulses
location
mark
sample
false
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13069079A
Other languages
Japanese (ja)
Inventor
Hideo Kusakabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13069079A priority Critical patent/JPS5654041A/en
Publication of JPS5654041A publication Critical patent/JPS5654041A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045Object or beam position registration

Abstract

PURPOSE:To conduct positioning accurately by a method wherein a sample base is moved by false pulses while electron beams are relatively deflected, an irradiating location is fixed and scanned, and the number of false pulses at a point of time when a mark is detected is obtained. CONSTITUTION:False pulses 17 are supplied to an X direction deflector 16 through an OR circuit 15 while being fed to an A/D converter 19. The deflector 16 independently deflects the pulses in the X direction. Thus, electron beams 11 are scanned in the X direction from an irradiating location relatively positioned to a material 13 to be exposed according to measuring pulses. When the beams 11 cross a mark 13a of the sample 13 by means of deflection, reflected electrons are generated, and the electrons are detected 18 and A/D converted 19. The false pulses are used as extracting clock, digital signals corresponding to the number of clock up to the rise and fall of detecting signals are emitted, and the signals are arithmetically processed 20. Thus, a mark location of the sample 13 is calculated, and the location is put out as positioning information. The same applies in the Y direction, and positioning can accurately be conducted.
JP13069079A 1979-10-09 1979-10-09 Electron beam exposure device Pending JPS5654041A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13069079A JPS5654041A (en) 1979-10-09 1979-10-09 Electron beam exposure device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13069079A JPS5654041A (en) 1979-10-09 1979-10-09 Electron beam exposure device

Publications (1)

Publication Number Publication Date
JPS5654041A true JPS5654041A (en) 1981-05-13

Family

ID=15040283

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13069079A Pending JPS5654041A (en) 1979-10-09 1979-10-09 Electron beam exposure device

Country Status (1)

Country Link
JP (1) JPS5654041A (en)

Similar Documents

Publication Publication Date Title
JPS5633830A (en) Detecting method for mark positioning by electron beam
JPS5621321A (en) Automatically setting method of focus and exposure coefficient of electron beam exposure apparatus
ES444049A1 (en) Process and apparatus for the elementary and chemical analysis of a sample by spectrum analysis of the energy of the secondary electrons
JPS5654041A (en) Electron beam exposure device
JPS56150303A (en) Surface form measuring device using scan-type electronic microscope
JPS57210549A (en) Method of correction attendant on deflection
JPS5258373A (en) Inspection for defects of pattern forming film
JPS567429A (en) Patterning device
JPS54148483A (en) Automatic detecting method for reference mark of exposure
JPS54138467A (en) Scanning type electron microscope or resembling apparatus
JPS53106163A (en) Electron beam meter
JPS5513874A (en) Measuring method for distribution of electron beam current density
JPS54109897A (en) Specimen analytical apparatus in scanning electron microscope or the like
JPS5481782A (en) Position mark detecting method of electron beam exposure unit
JPS5633829A (en) Inspection of pattern
JPS5640244A (en) Beam scanning correction at electron beam exposure
JPS56136446A (en) Ion injector
JPS5670633A (en) Method and device for measurement of position of exposed surface for electron beam exposure
JPS56130921A (en) Adjusting method of axis of charged particle beam
JPS5654040A (en) Electron beam exposure device
JPS54105970A (en) Electron beam drawing device and its use
JPS5796207A (en) Measuring apparatus for pattern dimensions
JPS57139924A (en) Drawing device by electron beam
JPS57210628A (en) Retrieving method for pattern data in electron beam drawing device
JPS5633824A (en) Method and device for electron beam exposing