JPS5633829A - Inspection of pattern - Google Patents

Inspection of pattern

Info

Publication number
JPS5633829A
JPS5633829A JP10989379A JP10989379A JPS5633829A JP S5633829 A JPS5633829 A JP S5633829A JP 10989379 A JP10989379 A JP 10989379A JP 10989379 A JP10989379 A JP 10989379A JP S5633829 A JPS5633829 A JP S5633829A
Authority
JP
Japan
Prior art keywords
pattern
substrate
electron beams
tested
exposure device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10989379A
Other languages
Japanese (ja)
Inventor
Yasutaka Ban
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10989379A priority Critical patent/JPS5633829A/en
Publication of JPS5633829A publication Critical patent/JPS5633829A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Electron Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To permit a high accurate pattern inspection in a short time by accommodating a substrate completed pattern formation in an electron beam exposure device and scanning is done wherein the reflection is detected and compared with the pattern data. CONSTITUTION:Patterns 9 are depicted by an electron beam exposure device and substrate to be tested 7 which completed such processes as development, etching or the like is again mounted on the stage of the electron beam exposure device. Next, the electron beams 13 scan the whole surface of the substrate to be tested 7 by the same way as that done at the time of pattern depiction and by deflecting the electronbeams 13. The above is done under the condition that the electron beams 13 are always irradiated. And emission electrons 14 generated when the electron beams 13 are irradiated to the substrate to be tested 7 are detected by a detector 15 and the emission electrons 14 are compared with the pattern data at the time of pattern depiction to detect defects. In this way, a high accurate mask inspection by the electron beams are perfomred.
JP10989379A 1979-08-29 1979-08-29 Inspection of pattern Pending JPS5633829A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10989379A JPS5633829A (en) 1979-08-29 1979-08-29 Inspection of pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10989379A JPS5633829A (en) 1979-08-29 1979-08-29 Inspection of pattern

Publications (1)

Publication Number Publication Date
JPS5633829A true JPS5633829A (en) 1981-04-04

Family

ID=14521822

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10989379A Pending JPS5633829A (en) 1979-08-29 1979-08-29 Inspection of pattern

Country Status (1)

Country Link
JP (1) JPS5633829A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59154020A (en) * 1983-02-22 1984-09-03 Victor Co Of Japan Ltd Inspection of mask

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5192182A (en) * 1975-02-10 1976-08-12

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5192182A (en) * 1975-02-10 1976-08-12

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59154020A (en) * 1983-02-22 1984-09-03 Victor Co Of Japan Ltd Inspection of mask

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