JPS5651577A - Chemical etching method - Google Patents
Chemical etching methodInfo
- Publication number
- JPS5651577A JPS5651577A JP12474379A JP12474379A JPS5651577A JP S5651577 A JPS5651577 A JP S5651577A JP 12474379 A JP12474379 A JP 12474379A JP 12474379 A JP12474379 A JP 12474379A JP S5651577 A JPS5651577 A JP S5651577A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- etched
- temp
- difference
- fluid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
Abstract
PURPOSE:To control the dimension of etching material excellently in chemical etching, by detecting the quantity of material to be etched from the change in temp. of etching fluid caused by the dissolution reaction during etching. CONSTITUTION:In performing chemical etching by immersing a material to be etched such as silicon substrate in etching fluid, the change in the temp. of etching fluid caused by dissolution reaction is measured. On the other hand, a graph is made which shows the relation between the difference in total weight (dissolved quantity) of the material to be etched and the difference in the temp. of the etching fluid with respect to a prescribed etching fluid. According to the graph, etching is performed until the temp. difference corresponding to the desired dimension is attained by detecting the dissolved quantity of the material to be etched in consideration of the density of the material to be etched. This method allows to control the thickness of etching excellently.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12474379A JPS5651577A (en) | 1979-09-29 | 1979-09-29 | Chemical etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12474379A JPS5651577A (en) | 1979-09-29 | 1979-09-29 | Chemical etching method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5651577A true JPS5651577A (en) | 1981-05-09 |
Family
ID=14893005
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12474379A Pending JPS5651577A (en) | 1979-09-29 | 1979-09-29 | Chemical etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5651577A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57186146A (en) * | 1981-05-04 | 1982-11-16 | Mine Safety Appliances Co | Pump device for sampling atmosphere specimen |
-
1979
- 1979-09-29 JP JP12474379A patent/JPS5651577A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57186146A (en) * | 1981-05-04 | 1982-11-16 | Mine Safety Appliances Co | Pump device for sampling atmosphere specimen |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3912563A (en) | Method of making semiconductor piezoresistive strain transducer | |
| JPS5651577A (en) | Chemical etching method | |
| JPS6468932A (en) | Dry etching | |
| JPS5645031A (en) | Etching method | |
| JPS5730332A (en) | Method of etching | |
| JPS57100733A (en) | Etching method for semiconductor substrate | |
| JPS55133538A (en) | Manufacturing method of semiconductor device | |
| JPS57120672A (en) | Plasma etching method | |
| JPS5456763A (en) | Resistivity measuring method for semiconductor silicon single-crystal | |
| JPS5539627A (en) | Automatic device for measuring specific resistance distribution of semiconductor | |
| JPS55138236A (en) | Manufacture of semiconductor device | |
| JPS5490083A (en) | Method of evaluating single crystal | |
| JPS55146934A (en) | Processing of surface shape of group 3-5 compound semiconductor | |
| JPS5785978A (en) | Etching jig | |
| JPS56152970A (en) | Etching device | |
| JPS57208155A (en) | Detecting method for pinhole | |
| JPS5731164A (en) | Manufacture of semiconductor device | |
| JPS5759328A (en) | Method for fixed exfoliation of sample | |
| JPS57170576A (en) | Manufacture of semiconductor photodetector | |
| JPS5740934A (en) | Manufacture of semiconductor element | |
| JPS57100734A (en) | Etching method for semiconductor substrate | |
| JPS5575221A (en) | Manufacturing semiconductor | |
| JPS57169237A (en) | Jig for heating silicon wafer | |
| JPS57155381A (en) | Wet etching method | |
| JPS56100452A (en) | Manufacture of semiconductor device |