JPS5649580A - Preparation of semiconductor infrared-ray detecting element - Google Patents

Preparation of semiconductor infrared-ray detecting element

Info

Publication number
JPS5649580A
JPS5649580A JP12592479A JP12592479A JPS5649580A JP S5649580 A JPS5649580 A JP S5649580A JP 12592479 A JP12592479 A JP 12592479A JP 12592479 A JP12592479 A JP 12592479A JP S5649580 A JPS5649580 A JP S5649580A
Authority
JP
Japan
Prior art keywords
layer
junction
detecting element
ray detecting
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12592479A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6161552B2 (enrdf_load_stackoverflow
Inventor
Takayasu Fukuda
Mitsuo Yoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP12592479A priority Critical patent/JPS5649580A/ja
Publication of JPS5649580A publication Critical patent/JPS5649580A/ja
Publication of JPS6161552B2 publication Critical patent/JPS6161552B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2212—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group II-VI materials, e.g. HgCdTe infrared photodiodes

Landscapes

  • Light Receiving Elements (AREA)
JP12592479A 1979-09-28 1979-09-28 Preparation of semiconductor infrared-ray detecting element Granted JPS5649580A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12592479A JPS5649580A (en) 1979-09-28 1979-09-28 Preparation of semiconductor infrared-ray detecting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12592479A JPS5649580A (en) 1979-09-28 1979-09-28 Preparation of semiconductor infrared-ray detecting element

Publications (2)

Publication Number Publication Date
JPS5649580A true JPS5649580A (en) 1981-05-06
JPS6161552B2 JPS6161552B2 (enrdf_load_stackoverflow) 1986-12-26

Family

ID=14922313

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12592479A Granted JPS5649580A (en) 1979-09-28 1979-09-28 Preparation of semiconductor infrared-ray detecting element

Country Status (1)

Country Link
JP (1) JPS5649580A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6316022U (enrdf_load_stackoverflow) * 1986-07-17 1988-02-02
JPH0936411A (ja) * 1995-07-17 1997-02-07 Nec Corp 赤外線検出器の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6316022U (enrdf_load_stackoverflow) * 1986-07-17 1988-02-02
JPH0936411A (ja) * 1995-07-17 1997-02-07 Nec Corp 赤外線検出器の製造方法

Also Published As

Publication number Publication date
JPS6161552B2 (enrdf_load_stackoverflow) 1986-12-26

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