JPS6161552B2 - - Google Patents
Info
- Publication number
- JPS6161552B2 JPS6161552B2 JP54125924A JP12592479A JPS6161552B2 JP S6161552 B2 JPS6161552 B2 JP S6161552B2 JP 54125924 A JP54125924 A JP 54125924A JP 12592479 A JP12592479 A JP 12592479A JP S6161552 B2 JPS6161552 B2 JP S6161552B2
- Authority
- JP
- Japan
- Prior art keywords
- type crystal
- layer
- sensing element
- junction
- infrared sensing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
- H10F30/2212—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group II-VI materials, e.g. HgCdTe infrared photodiodes
Landscapes
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12592479A JPS5649580A (en) | 1979-09-28 | 1979-09-28 | Preparation of semiconductor infrared-ray detecting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12592479A JPS5649580A (en) | 1979-09-28 | 1979-09-28 | Preparation of semiconductor infrared-ray detecting element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5649580A JPS5649580A (en) | 1981-05-06 |
| JPS6161552B2 true JPS6161552B2 (enrdf_load_stackoverflow) | 1986-12-26 |
Family
ID=14922313
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12592479A Granted JPS5649580A (en) | 1979-09-28 | 1979-09-28 | Preparation of semiconductor infrared-ray detecting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5649580A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH039701Y2 (enrdf_load_stackoverflow) * | 1986-07-17 | 1991-03-11 | ||
| JP2955983B2 (ja) * | 1995-07-17 | 1999-10-04 | 日本電気株式会社 | 赤外線検出器の製造方法 |
-
1979
- 1979-09-28 JP JP12592479A patent/JPS5649580A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5649580A (en) | 1981-05-06 |
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