JPS5648164A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5648164A JPS5648164A JP12358679A JP12358679A JPS5648164A JP S5648164 A JPS5648164 A JP S5648164A JP 12358679 A JP12358679 A JP 12358679A JP 12358679 A JP12358679 A JP 12358679A JP S5648164 A JPS5648164 A JP S5648164A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- resistance
- polycrystalline silicon
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 4
- 238000009792 diffusion process Methods 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052729 chemical element Inorganic materials 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Non-Adjustable Resistors (AREA)
Abstract
PURPOSE:To conform the temperature coefficient of a resistance element to that of an external metal coating resistor connected to it, when forming the resistance ele- ment consisting of polycrystalline silicon on the same semiconductor substrate on which an IC is provided, by controlling the temperature coefficient of the resistance value of the element with the value of the layer resistance of the polycrystalline silicon. CONSTITUTION:On a P type silicon substrate 1, an N type buried region 2 is diffu- sion formed, and all over the surface including the region, an N type layer 3 is epitaxially grown, and the layer 3 is divided into islands with plural P<+> type insulating and separating regions 4. Next, in an island region including the region 2, a P type base region 5 is diffusion formed, and in the region, an N<+> type emitter region 6 is formed, and neighboring the region 5, an N<+> type ohmic connecting region 7 is diffusion formed. Then the entire surface is covered with an insulating film 10, and above another island region, a polycrystalline silicon resistance element 8 is grown via the film 10 and connected to the region 6 with aluminum wiring 9. In this construction, the layer resistance of the polycrystalline silicon is selected to 70- 150OMEGA/square to match with an external resistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12358679A JPS5648164A (en) | 1979-09-26 | 1979-09-26 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12358679A JPS5648164A (en) | 1979-09-26 | 1979-09-26 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5648164A true JPS5648164A (en) | 1981-05-01 |
Family
ID=14864252
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12358679A Pending JPS5648164A (en) | 1979-09-26 | 1979-09-26 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5648164A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06507107A (en) * | 1992-03-19 | 1994-08-11 | サムソナイト コーポレイション | Luggage bag with intelligent opening mechanism |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS503793A (en) * | 1973-05-15 | 1975-01-16 |
-
1979
- 1979-09-26 JP JP12358679A patent/JPS5648164A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS503793A (en) * | 1973-05-15 | 1975-01-16 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06507107A (en) * | 1992-03-19 | 1994-08-11 | サムソナイト コーポレイション | Luggage bag with intelligent opening mechanism |
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