JPS5645899A - Vapor phase growing method for gallium nitride - Google Patents
Vapor phase growing method for gallium nitrideInfo
- Publication number
- JPS5645899A JPS5645899A JP12052479A JP12052479A JPS5645899A JP S5645899 A JPS5645899 A JP S5645899A JP 12052479 A JP12052479 A JP 12052479A JP 12052479 A JP12052479 A JP 12052479A JP S5645899 A JPS5645899 A JP S5645899A
- Authority
- JP
- Japan
- Prior art keywords
- gan
- gas
- carrier gas
- growth
- hcl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12052479A JPS5645899A (en) | 1979-09-18 | 1979-09-18 | Vapor phase growing method for gallium nitride |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12052479A JPS5645899A (en) | 1979-09-18 | 1979-09-18 | Vapor phase growing method for gallium nitride |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5645899A true JPS5645899A (en) | 1981-04-25 |
| JPS6221758B2 JPS6221758B2 (enrdf_load_stackoverflow) | 1987-05-14 |
Family
ID=14788382
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12052479A Granted JPS5645899A (en) | 1979-09-18 | 1979-09-18 | Vapor phase growing method for gallium nitride |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5645899A (enrdf_load_stackoverflow) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6054910A (ja) * | 1983-09-06 | 1985-03-29 | Central Glass Co Ltd | 炭化ケイ素粉末の製造方法 |
| JPH08125222A (ja) * | 1994-10-25 | 1996-05-17 | Toyoda Gosei Co Ltd | 3族窒化物半導体の製造方法 |
| JPH08264835A (ja) * | 1995-03-27 | 1996-10-11 | Sumitomo Electric Ind Ltd | 化合物半導体発光素子およびその製造方法 |
| JPH08264836A (ja) * | 1995-03-27 | 1996-10-11 | Sumitomo Electric Ind Ltd | 化合物半導体発光素子およびその製造方法 |
| JPH0940490A (ja) * | 1995-07-27 | 1997-02-10 | Hitachi Cable Ltd | 窒化ガリウム結晶の製造方法 |
| EP0937790A3 (en) * | 1998-01-26 | 2003-08-27 | Sumitomo Electric Industries, Ltd. | Method of making GaN single crystal and apparatus for making GaN single crystal |
| JP2009177219A (ja) * | 2009-05-15 | 2009-08-06 | Mitsubishi Chemicals Corp | GaN系半導体素子の製造方法 |
-
1979
- 1979-09-18 JP JP12052479A patent/JPS5645899A/ja active Granted
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6054910A (ja) * | 1983-09-06 | 1985-03-29 | Central Glass Co Ltd | 炭化ケイ素粉末の製造方法 |
| JPH08125222A (ja) * | 1994-10-25 | 1996-05-17 | Toyoda Gosei Co Ltd | 3族窒化物半導体の製造方法 |
| JPH08264835A (ja) * | 1995-03-27 | 1996-10-11 | Sumitomo Electric Ind Ltd | 化合物半導体発光素子およびその製造方法 |
| JPH08264836A (ja) * | 1995-03-27 | 1996-10-11 | Sumitomo Electric Ind Ltd | 化合物半導体発光素子およびその製造方法 |
| JPH0940490A (ja) * | 1995-07-27 | 1997-02-10 | Hitachi Cable Ltd | 窒化ガリウム結晶の製造方法 |
| EP0937790A3 (en) * | 1998-01-26 | 2003-08-27 | Sumitomo Electric Industries, Ltd. | Method of making GaN single crystal and apparatus for making GaN single crystal |
| JP2009177219A (ja) * | 2009-05-15 | 2009-08-06 | Mitsubishi Chemicals Corp | GaN系半導体素子の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6221758B2 (enrdf_load_stackoverflow) | 1987-05-14 |
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