JPS5645899A - Vapor phase growing method for gallium nitride - Google Patents

Vapor phase growing method for gallium nitride

Info

Publication number
JPS5645899A
JPS5645899A JP12052479A JP12052479A JPS5645899A JP S5645899 A JPS5645899 A JP S5645899A JP 12052479 A JP12052479 A JP 12052479A JP 12052479 A JP12052479 A JP 12052479A JP S5645899 A JPS5645899 A JP S5645899A
Authority
JP
Japan
Prior art keywords
gan
gas
carrier gas
growth
hcl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12052479A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6221758B2 (enrdf_load_stackoverflow
Inventor
Kiyoshi Yoneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP12052479A priority Critical patent/JPS5645899A/ja
Publication of JPS5645899A publication Critical patent/JPS5645899A/ja
Publication of JPS6221758B2 publication Critical patent/JPS6221758B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP12052479A 1979-09-18 1979-09-18 Vapor phase growing method for gallium nitride Granted JPS5645899A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12052479A JPS5645899A (en) 1979-09-18 1979-09-18 Vapor phase growing method for gallium nitride

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12052479A JPS5645899A (en) 1979-09-18 1979-09-18 Vapor phase growing method for gallium nitride

Publications (2)

Publication Number Publication Date
JPS5645899A true JPS5645899A (en) 1981-04-25
JPS6221758B2 JPS6221758B2 (enrdf_load_stackoverflow) 1987-05-14

Family

ID=14788382

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12052479A Granted JPS5645899A (en) 1979-09-18 1979-09-18 Vapor phase growing method for gallium nitride

Country Status (1)

Country Link
JP (1) JPS5645899A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6054910A (ja) * 1983-09-06 1985-03-29 Central Glass Co Ltd 炭化ケイ素粉末の製造方法
JPH08125222A (ja) * 1994-10-25 1996-05-17 Toyoda Gosei Co Ltd 3族窒化物半導体の製造方法
JPH08264835A (ja) * 1995-03-27 1996-10-11 Sumitomo Electric Ind Ltd 化合物半導体発光素子およびその製造方法
JPH08264836A (ja) * 1995-03-27 1996-10-11 Sumitomo Electric Ind Ltd 化合物半導体発光素子およびその製造方法
JPH0940490A (ja) * 1995-07-27 1997-02-10 Hitachi Cable Ltd 窒化ガリウム結晶の製造方法
EP0937790A3 (en) * 1998-01-26 2003-08-27 Sumitomo Electric Industries, Ltd. Method of making GaN single crystal and apparatus for making GaN single crystal
JP2009177219A (ja) * 2009-05-15 2009-08-06 Mitsubishi Chemicals Corp GaN系半導体素子の製造方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6054910A (ja) * 1983-09-06 1985-03-29 Central Glass Co Ltd 炭化ケイ素粉末の製造方法
JPH08125222A (ja) * 1994-10-25 1996-05-17 Toyoda Gosei Co Ltd 3族窒化物半導体の製造方法
JPH08264835A (ja) * 1995-03-27 1996-10-11 Sumitomo Electric Ind Ltd 化合物半導体発光素子およびその製造方法
JPH08264836A (ja) * 1995-03-27 1996-10-11 Sumitomo Electric Ind Ltd 化合物半導体発光素子およびその製造方法
JPH0940490A (ja) * 1995-07-27 1997-02-10 Hitachi Cable Ltd 窒化ガリウム結晶の製造方法
EP0937790A3 (en) * 1998-01-26 2003-08-27 Sumitomo Electric Industries, Ltd. Method of making GaN single crystal and apparatus for making GaN single crystal
JP2009177219A (ja) * 2009-05-15 2009-08-06 Mitsubishi Chemicals Corp GaN系半導体素子の製造方法

Also Published As

Publication number Publication date
JPS6221758B2 (enrdf_load_stackoverflow) 1987-05-14

Similar Documents

Publication Publication Date Title
JPS5645899A (en) Vapor phase growing method for gallium nitride
Kaneko et al. Epitaxial growth of A1N film by low-pressure MOCVD in gas-beam-flow reactor
JPS58191423A (ja) 3−5半導体気相成長装置
JPS63103894A (ja) 窒化ガリウム結晶の成長方法
JPS5727999A (en) Vapor phase growing method for gan
JP3090145B2 (ja) 化合物半導体の気相成長装置
JPS5267260A (en) Manufacture of iii-v group compounds semiconductor epitaxial laminatio n crystal
JPH06314659A (ja) 窒化ガリウム系化合物半導体膜の結晶成長方法
JPS5580722A (en) Arsenic recovering method
JPS5599717A (en) Method of growing crystal
JPH0590161A (ja) 有機金属気相成長装置
JPS5484973A (en) Vapour-phase growth method of compound semiconductor
GB1059451A (en) Improvements relating to methods and apparatus for epitaxial crystal growth
JPS57123895A (en) Vapor-phase epitaxial growing apparatus
JPS58115097A (ja) 気相エピタキシヤル結晶成長方法
JPS57145314A (en) Vapor growth apparatus for 3-5 group compound semiconductor
JPS57200292A (en) Vapor-phase epitaxial growth apparatus
JPH11121386A (ja) 窒化ガリウム系化合物半導体の気相成長装置
JPS5756400A (en) Continuous vapor-phase epitaxial growing furnace
JPS6131393A (ja) 気相成長装置
JPS5788094A (en) Vapor phase epitaxial manufacture of crystal
JPS5376980A (en) Gas phase growth method of compound semiconductor
JPS5649519A (en) Vapor growth of compound semiconductor
JPS636835A (ja) 半導体薄膜の製造方法
JPH0573251B2 (enrdf_load_stackoverflow)