JPS5645759A - Preparation of vapor growth film - Google Patents

Preparation of vapor growth film

Info

Publication number
JPS5645759A
JPS5645759A JP12109279A JP12109279A JPS5645759A JP S5645759 A JPS5645759 A JP S5645759A JP 12109279 A JP12109279 A JP 12109279A JP 12109279 A JP12109279 A JP 12109279A JP S5645759 A JPS5645759 A JP S5645759A
Authority
JP
Japan
Prior art keywords
substrate
film
generated
gas
reaction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12109279A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6149392B2 (enrdf_load_stackoverflow
Inventor
Nobuyasu Hase
Masami Onuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP12109279A priority Critical patent/JPS5645759A/ja
Publication of JPS5645759A publication Critical patent/JPS5645759A/ja
Publication of JPS6149392B2 publication Critical patent/JPS6149392B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles

Landscapes

  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP12109279A 1979-09-20 1979-09-20 Preparation of vapor growth film Granted JPS5645759A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12109279A JPS5645759A (en) 1979-09-20 1979-09-20 Preparation of vapor growth film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12109279A JPS5645759A (en) 1979-09-20 1979-09-20 Preparation of vapor growth film

Publications (2)

Publication Number Publication Date
JPS5645759A true JPS5645759A (en) 1981-04-25
JPS6149392B2 JPS6149392B2 (enrdf_load_stackoverflow) 1986-10-29

Family

ID=14802670

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12109279A Granted JPS5645759A (en) 1979-09-20 1979-09-20 Preparation of vapor growth film

Country Status (1)

Country Link
JP (1) JPS5645759A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59192832U (ja) * 1983-06-08 1984-12-21 日本電子株式会社 光ｃｖｄ装置
JPS6063534A (ja) * 1983-09-17 1985-04-11 Mitsubishi Electric Corp 微細加工方法
JPH0247263A (ja) * 1988-08-09 1990-02-16 Anelva Corp 薄膜作製装置および方法
CN102538342A (zh) * 2011-01-04 2012-07-04 泰州乐金电子冷机有限公司 一种冰箱用回风装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5266884A (en) * 1975-12-01 1977-06-02 Nippon Telegr & Teleph Corp <Ntt> Process for forming film on base material
JPS5270762A (en) * 1975-12-09 1977-06-13 Mitsubishi Electric Corp Electrode formation method of semiconductor element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5266884A (en) * 1975-12-01 1977-06-02 Nippon Telegr & Teleph Corp <Ntt> Process for forming film on base material
JPS5270762A (en) * 1975-12-09 1977-06-13 Mitsubishi Electric Corp Electrode formation method of semiconductor element

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59192832U (ja) * 1983-06-08 1984-12-21 日本電子株式会社 光ｃｖｄ装置
JPS6063534A (ja) * 1983-09-17 1985-04-11 Mitsubishi Electric Corp 微細加工方法
JPH0247263A (ja) * 1988-08-09 1990-02-16 Anelva Corp 薄膜作製装置および方法
CN102538342A (zh) * 2011-01-04 2012-07-04 泰州乐金电子冷机有限公司 一种冰箱用回风装置

Also Published As

Publication number Publication date
JPS6149392B2 (enrdf_load_stackoverflow) 1986-10-29

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