JPS5644196A - Nonvolatile semiconductor memory device - Google Patents
Nonvolatile semiconductor memory deviceInfo
- Publication number
- JPS5644196A JPS5644196A JP11819779A JP11819779A JPS5644196A JP S5644196 A JPS5644196 A JP S5644196A JP 11819779 A JP11819779 A JP 11819779A JP 11819779 A JP11819779 A JP 11819779A JP S5644196 A JPS5644196 A JP S5644196A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- breakdown
- drain
- memory element
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/24—Bit-line control circuits
Landscapes
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
Abstract
PURPOSE:To reduce the width of a programmable program voltage by preventing the generation of a source-drain brakedown in the write operation of a channel electron application type memory element. CONSTITUTION:To respective address line 53, one P-N junction breakdown method 56 each is added. The breakdown voltage of breakdown method 56 is set lower than the source-drain breakdown voltage of a memory element in write operation. Load curve 72 has constant voltage characteristics at breakdown voltage 75 of added P-N junction. As program voltage VP is increased, load curve 72 moves right, but a voltage higher than breakdown voltage 75 of the added P-N junction is never applied to the drain of the memory element, so that the generation of the source-drain breakdown of the memory element will be prevented.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11819779A JPS5644196A (en) | 1979-09-14 | 1979-09-14 | Nonvolatile semiconductor memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11819779A JPS5644196A (en) | 1979-09-14 | 1979-09-14 | Nonvolatile semiconductor memory device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5644196A true JPS5644196A (en) | 1981-04-23 |
Family
ID=14730568
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11819779A Pending JPS5644196A (en) | 1979-09-14 | 1979-09-14 | Nonvolatile semiconductor memory device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5644196A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2506495A1 (en) * | 1981-05-22 | 1982-11-26 | Hitachi Ltd | ELECTRICALLY PROGRAMMABLE DEAD MEMORY |
-
1979
- 1979-09-14 JP JP11819779A patent/JPS5644196A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2506495A1 (en) * | 1981-05-22 | 1982-11-26 | Hitachi Ltd | ELECTRICALLY PROGRAMMABLE DEAD MEMORY |
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