JPS5642366A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5642366A
JPS5642366A JP11779779A JP11779779A JPS5642366A JP S5642366 A JPS5642366 A JP S5642366A JP 11779779 A JP11779779 A JP 11779779A JP 11779779 A JP11779779 A JP 11779779A JP S5642366 A JPS5642366 A JP S5642366A
Authority
JP
Japan
Prior art keywords
region
layer
coated
conductor
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11779779A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6325505B2 (enExample
Inventor
Katsuhiko Akiyama
Hideyuki Takahashi
Masaki Okayama
Shuji Tsuchida
Akira Kojima
Norio Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP11779779A priority Critical patent/JPS5642366A/ja
Publication of JPS5642366A publication Critical patent/JPS5642366A/ja
Publication of JPS6325505B2 publication Critical patent/JPS6325505B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
JP11779779A 1979-09-13 1979-09-13 Manufacture of semiconductor device Granted JPS5642366A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11779779A JPS5642366A (en) 1979-09-13 1979-09-13 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11779779A JPS5642366A (en) 1979-09-13 1979-09-13 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5642366A true JPS5642366A (en) 1981-04-20
JPS6325505B2 JPS6325505B2 (enExample) 1988-05-25

Family

ID=14720519

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11779779A Granted JPS5642366A (en) 1979-09-13 1979-09-13 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5642366A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5868960A (ja) * 1981-09-30 1983-04-25 シ−メンス・アクチエンゲゼルシヤフト 導電層の生成方法
JPS59111353A (ja) * 1982-12-17 1984-06-27 Toshiba Corp 半導体装置の製造方法
JPS59186365A (ja) * 1983-04-06 1984-10-23 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JPS63184628U (enExample) * 1987-05-20 1988-11-28
US4853760A (en) * 1981-12-12 1989-08-01 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device having insulating layer including polyimide film
WO1996017102A1 (en) * 1994-11-21 1996-06-06 Giedd Ryan E Method for making electrical devices from ion-implanted conductive polymers

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49110279A (enExample) * 1973-02-20 1974-10-21

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49110279A (enExample) * 1973-02-20 1974-10-21

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5868960A (ja) * 1981-09-30 1983-04-25 シ−メンス・アクチエンゲゼルシヤフト 導電層の生成方法
US4853760A (en) * 1981-12-12 1989-08-01 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device having insulating layer including polyimide film
JPS59111353A (ja) * 1982-12-17 1984-06-27 Toshiba Corp 半導体装置の製造方法
JPS59186365A (ja) * 1983-04-06 1984-10-23 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JPS63184628U (enExample) * 1987-05-20 1988-11-28
WO1996017102A1 (en) * 1994-11-21 1996-06-06 Giedd Ryan E Method for making electrical devices from ion-implanted conductive polymers
US5753523A (en) * 1994-11-21 1998-05-19 Brewer Science, Inc. Method for making airbridge from ion-implanted conductive polymers

Also Published As

Publication number Publication date
JPS6325505B2 (enExample) 1988-05-25

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