JPS5642348A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5642348A
JPS5642348A JP11825879A JP11825879A JPS5642348A JP S5642348 A JPS5642348 A JP S5642348A JP 11825879 A JP11825879 A JP 11825879A JP 11825879 A JP11825879 A JP 11825879A JP S5642348 A JPS5642348 A JP S5642348A
Authority
JP
Japan
Prior art keywords
film
sio2
cvd process
sih4
si3n4
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11825879A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6150378B2 (enrdf_load_stackoverflow
Inventor
Hiroo Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11825879A priority Critical patent/JPS5642348A/ja
Publication of JPS5642348A publication Critical patent/JPS5642348A/ja
Publication of JPS6150378B2 publication Critical patent/JPS6150378B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
JP11825879A 1979-09-14 1979-09-14 Semiconductor device Granted JPS5642348A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11825879A JPS5642348A (en) 1979-09-14 1979-09-14 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11825879A JPS5642348A (en) 1979-09-14 1979-09-14 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5642348A true JPS5642348A (en) 1981-04-20
JPS6150378B2 JPS6150378B2 (enrdf_load_stackoverflow) 1986-11-04

Family

ID=14732162

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11825879A Granted JPS5642348A (en) 1979-09-14 1979-09-14 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5642348A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61178912U (enrdf_load_stackoverflow) * 1985-04-23 1986-11-08
JPS62130797U (enrdf_load_stackoverflow) * 1986-02-07 1987-08-18
JPS6335500U (enrdf_load_stackoverflow) * 1986-08-26 1988-03-07

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61178912U (enrdf_load_stackoverflow) * 1985-04-23 1986-11-08
JPS62130797U (enrdf_load_stackoverflow) * 1986-02-07 1987-08-18
JPS6335500U (enrdf_load_stackoverflow) * 1986-08-26 1988-03-07

Also Published As

Publication number Publication date
JPS6150378B2 (enrdf_load_stackoverflow) 1986-11-04

Similar Documents

Publication Publication Date Title
JPS5642348A (en) Semiconductor device
JPS57192846A (en) Humidity sensor and manufacture thereof
JPS57100748A (en) Manufacture of semiconductor device
JPS57170550A (en) Manufacture of semiconductor device
JPS5745931A (en) Semiconductor device with multilayer passivation film and manufacture thereof
EP0026981A2 (en) Method of measuring moisture permeation
JPS648633A (en) Semiconductor device
JPS56125855A (en) Manufacture of semiconductor device
JPS55138859A (en) Multilayer wiring type semiconductor device
FR2309979A1 (fr) Circuit integre a semi-conducteurs comportant des connexions de fils electriques proteges
JPS57113296A (en) Switching element
JPS55113334A (en) Manufacture of passivation film
JPS6414968A (en) Formation of gate electrode
JPS57103333A (en) Manufacture of semiconductor device
JPS57211752A (en) Semiconductor device
JPS57199224A (en) Semiconductor device
JPS5465599A (en) Gas sensor
JPS56148826A (en) Manufacture of semiconductor device
JPS6482652A (en) Manufacture of semiconductor device
JPS6422039A (en) Semiconductor device
JPS5756948A (en) Manufacture of semiconductor device
JPS5717149A (en) Semiconductor device
JPS55111163A (en) Semiconductor device and manufacturing method thereof
JPS55110056A (en) Semiconductor device
JPS5796553A (en) Semiconductor device