JPS5641592A - Semiconductor memory unit - Google Patents

Semiconductor memory unit

Info

Publication number
JPS5641592A
JPS5641592A JP11648179A JP11648179A JPS5641592A JP S5641592 A JPS5641592 A JP S5641592A JP 11648179 A JP11648179 A JP 11648179A JP 11648179 A JP11648179 A JP 11648179A JP S5641592 A JPS5641592 A JP S5641592A
Authority
JP
Japan
Prior art keywords
potential
line
level
word line
memory unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11648179A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6226116B2 (enrdf_load_stackoverflow
Inventor
Toshio Takeshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11648179A priority Critical patent/JPS5641592A/ja
Publication of JPS5641592A publication Critical patent/JPS5641592A/ja
Publication of JPS6226116B2 publication Critical patent/JPS6226116B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
JP11648179A 1979-09-11 1979-09-11 Semiconductor memory unit Granted JPS5641592A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11648179A JPS5641592A (en) 1979-09-11 1979-09-11 Semiconductor memory unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11648179A JPS5641592A (en) 1979-09-11 1979-09-11 Semiconductor memory unit

Publications (2)

Publication Number Publication Date
JPS5641592A true JPS5641592A (en) 1981-04-18
JPS6226116B2 JPS6226116B2 (enrdf_load_stackoverflow) 1987-06-06

Family

ID=14688168

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11648179A Granted JPS5641592A (en) 1979-09-11 1979-09-11 Semiconductor memory unit

Country Status (1)

Country Link
JP (1) JPS5641592A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60177495A (ja) * 1984-02-22 1985-09-11 Nec Corp 半導体メモリ装置
JPS63894A (ja) * 1986-06-20 1988-01-05 Hitachi Ltd メモリ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60177495A (ja) * 1984-02-22 1985-09-11 Nec Corp 半導体メモリ装置
JPS63894A (ja) * 1986-06-20 1988-01-05 Hitachi Ltd メモリ

Also Published As

Publication number Publication date
JPS6226116B2 (enrdf_load_stackoverflow) 1987-06-06

Similar Documents

Publication Publication Date Title
KR960032488A (ko) 연상메모리장치
JPH059878B2 (enrdf_load_stackoverflow)
EP0370432A3 (en) High speed differential sense amplifier for use with single transistor memory cells
CN106710625B (zh) 突发模式读可控sram
TW342502B (en) Gain memory cell with diode
JPS5641593A (en) Semiconductor memory unit
JPS57109190A (en) Semiconductor storage device and its manufacture
TW358940B (en) Semiconductor storage device
JPS62293596A (ja) 連想記憶装置
US4380055A (en) Static RAM memory cell
JPS5693178A (en) Semiconductor memory device
JPS5641592A (en) Semiconductor memory unit
JPS5641591A (en) Semiconductor memory unit
JPS56107387A (en) Semiconductor storage device
JPS5538611A (en) Memory circuit
KR900019010A (ko) 메모리 카트리지 및 메모리 제어방법
Liu et al. A multi-level DRAM with fast read and low power consumption
JPS56143592A (en) Semiconductor memory device
KR850008238A (ko) 반도체 기억장치
US6442055B1 (en) System and method for conserving power in a content addressable memory by providing an independent search line voltage
JPS5683886A (en) Semiconductor storage device
JP3057751B2 (ja) 半導体メモリ
JPS5512576A (en) Integrated memory cell
JPS55113195A (en) Reading method of memory unit
EP0397194A3 (en) Semiconductor memory device having two types of memory cell