JPS563978A - Semiconductor fuel cell using transistor effect - Google Patents
Semiconductor fuel cell using transistor effectInfo
- Publication number
- JPS563978A JPS563978A JP7982379A JP7982379A JPS563978A JP S563978 A JPS563978 A JP S563978A JP 7982379 A JP7982379 A JP 7982379A JP 7982379 A JP7982379 A JP 7982379A JP S563978 A JPS563978 A JP S563978A
- Authority
- JP
- Japan
- Prior art keywords
- type semiconductor
- junction
- fuel
- electrode
- fuel cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M8/00—Fuel cells; Manufacture thereof
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Hybrid Cells (AREA)
Abstract
PURPOSE:To obtain a fuel cell by using transistor effect of P-N junction semiconductor. CONSTITUTION:A fuel (hydrogen) flows in P-N junction portion between the porous P-type semiconductor 1 and the porous N-type semiconductor 2. When current is flowed there by the electrode (input) 4, micro discharge phenomenon occurs in the P-N junction, whereby the fuel (hydrogen) 6 is electrically charged to activate, and a chemical reaction takes place between the activated fuel and the oxidant (air) 7 flowing in the P-N junction between the N-type semiconductor 2 and the P-type semiconductor 3 to generate a current which, in turns, flows in the electrode (output) 7 by rectifying and amplifying actions. And, a compound (water) formed by the chemical reaction is exhausted through the groove in the P-N junction between the N-type semiconductor 2 and the P-type semiconductor 3. The control of the cell is made by switching the electrode (input) 4.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7982379A JPS563978A (en) | 1979-06-25 | 1979-06-25 | Semiconductor fuel cell using transistor effect |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7982379A JPS563978A (en) | 1979-06-25 | 1979-06-25 | Semiconductor fuel cell using transistor effect |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS563978A true JPS563978A (en) | 1981-01-16 |
Family
ID=13700921
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7982379A Pending JPS563978A (en) | 1979-06-25 | 1979-06-25 | Semiconductor fuel cell using transistor effect |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS563978A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61128709U (en) * | 1985-01-30 | 1986-08-12 | ||
KR100386323B1 (en) * | 2000-12-29 | 2003-06-02 | 남기석 | Manufacturing method of bipolar plate using semiconductor materials for mini-fuel cells |
WO2017128759A1 (en) * | 2016-01-27 | 2017-08-03 | 广州道动新能源有限公司 | Voltaic fuel cell |
-
1979
- 1979-06-25 JP JP7982379A patent/JPS563978A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61128709U (en) * | 1985-01-30 | 1986-08-12 | ||
JPH0530168Y2 (en) * | 1985-01-30 | 1993-08-02 | ||
KR100386323B1 (en) * | 2000-12-29 | 2003-06-02 | 남기석 | Manufacturing method of bipolar plate using semiconductor materials for mini-fuel cells |
WO2017128759A1 (en) * | 2016-01-27 | 2017-08-03 | 广州道动新能源有限公司 | Voltaic fuel cell |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB894530A (en) | Fuel cell | |
JPS563978A (en) | Semiconductor fuel cell using transistor effect | |
GB1224932A (en) | Improvements in generating electricity in a fuel cell | |
JPS51123779A (en) | A hydrogen-oxygen drawing method using electrochemical photoelectric c ells | |
JPS5366390A (en) | Longitudinal multi junction solar cell | |
GB1101603A (en) | Gas diffusion electrode | |
Kordesch | Hydrogen-oxygen fuel cells with carbon electrodes | |
GB948984A (en) | Improved fuel cell | |
Dean et al. | Silicon solar cells for highly concentrated sunlight | |
JPS5472984A (en) | Semiconductor rectifier | |
JPS5586153A (en) | Driving method for semiconductor switching element | |
RU2017279C1 (en) | D c power supply system | |
JPS5772389A (en) | Constant-voltage diode | |
JPS5368087A (en) | Semiconductor device | |
JPS5555561A (en) | Junction destructive programmable memory cell | |
JPS56131973A (en) | Luminiscent device | |
JPS5412581A (en) | Photoelectric transducer | |
JPS534490A (en) | Photocell | |
Boer | LIGHT-INDUCED LOSS MECHANISM (LILM) IN THIN-FILM SOLAR CELLS | |
JPS5732692A (en) | Semiconductor laser device | |
EVANS | High voltage planar multijunction solar cell[Patent] | |
Wrighton et al. | Photoassisted electrolysis of water-Conversion of optical to chemical energy | |
JPS55103778A (en) | Light-emitting diode | |
JPS5573986A (en) | Semiconductor memory device | |
JPS5354494A (en) | Photo cell |