JPS5472984A - Semiconductor rectifier - Google Patents
Semiconductor rectifierInfo
- Publication number
- JPS5472984A JPS5472984A JP13984777A JP13984777A JPS5472984A JP S5472984 A JPS5472984 A JP S5472984A JP 13984777 A JP13984777 A JP 13984777A JP 13984777 A JP13984777 A JP 13984777A JP S5472984 A JPS5472984 A JP S5472984A
- Authority
- JP
- Japan
- Prior art keywords
- pellet
- killer
- junction
- time
- dummy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To reduce noises with a forward-current recovery time made long by diffusing a killer to a dummy pellet whrer no PN junction is formed without diffusing the life time killer to a pellet with a PN junction and by connecting it in series to the PN junction pellet.
CONSTITUTION: Semiconductor pellets 3 with a PN junction formed are connected in series, and sndwiched between electrodes 2 fitted with lead line 1 to constitute the current unit. At this time, a life-time killer is not diffused to pellet 3 and dummy pellets 4 to which a killer such as Pt and Au has been diffused are fixed to both the side of lamination pellet 3. At this time, dummy pellet 4 when employing a P- type Si pellet gains more effect of prolonging a recovery time in terms of mobility. As a result, there is no need to insert a seies resistance into the semiconductor element, no dispersion of characteristics appears because of no killer diffusion of the PN-junction pellet, and the voltage drop is also reduced.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13984777A JPS5472984A (en) | 1977-11-24 | 1977-11-24 | Semiconductor rectifier |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13984777A JPS5472984A (en) | 1977-11-24 | 1977-11-24 | Semiconductor rectifier |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5472984A true JPS5472984A (en) | 1979-06-11 |
Family
ID=15254902
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13984777A Pending JPS5472984A (en) | 1977-11-24 | 1977-11-24 | Semiconductor rectifier |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5472984A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5917276A (en) * | 1982-07-20 | 1984-01-28 | Hitachi Ltd | Semiconductor device |
JPS6197858U (en) * | 1984-12-04 | 1986-06-23 | ||
CN102637596A (en) * | 2011-03-22 | 2012-08-15 | 南通皋鑫电子股份有限公司 | Method for manufacturing high-frequency high-voltage diode by use of czochralski silicon wafer |
-
1977
- 1977-11-24 JP JP13984777A patent/JPS5472984A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5917276A (en) * | 1982-07-20 | 1984-01-28 | Hitachi Ltd | Semiconductor device |
JPS6197858U (en) * | 1984-12-04 | 1986-06-23 | ||
CN102637596A (en) * | 2011-03-22 | 2012-08-15 | 南通皋鑫电子股份有限公司 | Method for manufacturing high-frequency high-voltage diode by use of czochralski silicon wafer |
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