JPS5636128A - Reaction type ion plating device - Google Patents

Reaction type ion plating device

Info

Publication number
JPS5636128A
JPS5636128A JP11155979A JP11155979A JPS5636128A JP S5636128 A JPS5636128 A JP S5636128A JP 11155979 A JP11155979 A JP 11155979A JP 11155979 A JP11155979 A JP 11155979A JP S5636128 A JPS5636128 A JP S5636128A
Authority
JP
Japan
Prior art keywords
chamber
inactive gas
ion plating
electronic beam
substance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11155979A
Other languages
Japanese (ja)
Inventor
Kazumi Shimada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP11155979A priority Critical patent/JPS5636128A/en
Publication of JPS5636128A publication Critical patent/JPS5636128A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To obtain an uniform reaction subsance by a method wherein a differental pressure plate which is provided an opening is installed between an electronic beam vaporization source and a plated substance, an inactive gas is flown between the differential pressure plate and the vaproization source. CONSTITUTION:The differential pressure paltes 10, 10' having adjusting inlets 9, 9' is installed between an electron beam chamber 6 and an inactive gas chamber 7, and between the ion plating chamber with the plated substance 17 and the inactive gas hamber 7, the inactive gas such as Ar or other is induced to the inactive gas chmber 7 from an inlet 13, and the pressure in the inactive gas chamber is made higher than that in an ion plating chamber 8, the electronic beam chamber 6 to prevent the electronic beam vaporzation soure 14 from reacting with the reaction gas induced to the ion plating chamber in the chamber 6. Thus, the power of the electronic beam is maintained in constant and the constant reacting substance can be obtained at all times.
JP11155979A 1979-08-31 1979-08-31 Reaction type ion plating device Pending JPS5636128A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11155979A JPS5636128A (en) 1979-08-31 1979-08-31 Reaction type ion plating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11155979A JPS5636128A (en) 1979-08-31 1979-08-31 Reaction type ion plating device

Publications (1)

Publication Number Publication Date
JPS5636128A true JPS5636128A (en) 1981-04-09

Family

ID=14564451

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11155979A Pending JPS5636128A (en) 1979-08-31 1979-08-31 Reaction type ion plating device

Country Status (1)

Country Link
JP (1) JPS5636128A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0138515A2 (en) * 1983-10-07 1985-04-24 Nihon Shinku Gijutsu Kabushiki Kaisha An apparatus for use in manufacturing a perpendicular magnetic recording member

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0138515A2 (en) * 1983-10-07 1985-04-24 Nihon Shinku Gijutsu Kabushiki Kaisha An apparatus for use in manufacturing a perpendicular magnetic recording member

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