JPS55165626A - Method for arranging substrate in chemical evaporating apparatus - Google Patents

Method for arranging substrate in chemical evaporating apparatus

Info

Publication number
JPS55165626A
JPS55165626A JP7282879A JP7282879A JPS55165626A JP S55165626 A JPS55165626 A JP S55165626A JP 7282879 A JP7282879 A JP 7282879A JP 7282879 A JP7282879 A JP 7282879A JP S55165626 A JPS55165626 A JP S55165626A
Authority
JP
Japan
Prior art keywords
substrates
reaction
constitution
furnace
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7282879A
Other languages
Japanese (ja)
Inventor
Masaaki Tobioka
Suehiro Nakao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP7282879A priority Critical patent/JPS55165626A/en
Publication of JPS55165626A publication Critical patent/JPS55165626A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To make the thickness of a film uniform by arranging the substrates so that distances between the substrates become sequentially wider in the order from the side of a reaction-gas introducing hole to the side of an exhausting hole. CONSTITUTION:In the case a thin film is covered on substrates by chemical evaporation, the distance between the substrates is smallest at the vicinity of a gas introducing hole where reacting materials are abundant in a reaction furnace, and the distances become sequentially wider in the direction to an exhausting hole. In this constitution, the thin film of uniform thickness can be readily formed in the reaction furnace, and the shortcomings relevant to the formation of the temperature distribution in the conventional furnace, reduction in the diameter of a reaction tubes, and alternate introduction of reaction gases, and the like can be overcome fairly well.
JP7282879A 1979-06-08 1979-06-08 Method for arranging substrate in chemical evaporating apparatus Pending JPS55165626A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7282879A JPS55165626A (en) 1979-06-08 1979-06-08 Method for arranging substrate in chemical evaporating apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7282879A JPS55165626A (en) 1979-06-08 1979-06-08 Method for arranging substrate in chemical evaporating apparatus

Publications (1)

Publication Number Publication Date
JPS55165626A true JPS55165626A (en) 1980-12-24

Family

ID=13500659

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7282879A Pending JPS55165626A (en) 1979-06-08 1979-06-08 Method for arranging substrate in chemical evaporating apparatus

Country Status (1)

Country Link
JP (1) JPS55165626A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01226149A (en) * 1988-03-07 1989-09-08 Matsushita Electric Ind Co Ltd Vapor growth apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01226149A (en) * 1988-03-07 1989-09-08 Matsushita Electric Ind Co Ltd Vapor growth apparatus

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