JPS5796528A - Microwave plasma treating device - Google Patents

Microwave plasma treating device

Info

Publication number
JPS5796528A
JPS5796528A JP17268080A JP17268080A JPS5796528A JP S5796528 A JPS5796528 A JP S5796528A JP 17268080 A JP17268080 A JP 17268080A JP 17268080 A JP17268080 A JP 17268080A JP S5796528 A JPS5796528 A JP S5796528A
Authority
JP
Japan
Prior art keywords
plasma
chamber
reacting chamber
chambers
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17268080A
Other languages
Japanese (ja)
Inventor
Hiroshi Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17268080A priority Critical patent/JPS5796528A/en
Publication of JPS5796528A publication Critical patent/JPS5796528A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To equalize etching operation by providing small holes which communicate a plasma generating chamber and a plasma reacting chamber through a shielding plate which shields both chambers, and eliminating standing waves in microwaves generated in an oven. CONSTITUTION:The small holes 5 are perforated through the microwave shielding plate 4 which separates the microwave oven 1 into the plasma generating chamber 2 and the plasma reacting chamber 3, and said two chambers are communicated. In this constitution, the plasma enters into the reacting chamber through the communicating holes 5, but most of the microwaves are attenuated and scattered. Therefore the degree of further excitation of the plasma in the reacting chamber 3 is small, the reaction is performed at a low temperature in etching, and the temperature can be increased when the resist film is incinerated.
JP17268080A 1980-12-09 1980-12-09 Microwave plasma treating device Pending JPS5796528A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17268080A JPS5796528A (en) 1980-12-09 1980-12-09 Microwave plasma treating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17268080A JPS5796528A (en) 1980-12-09 1980-12-09 Microwave plasma treating device

Publications (1)

Publication Number Publication Date
JPS5796528A true JPS5796528A (en) 1982-06-15

Family

ID=15946368

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17268080A Pending JPS5796528A (en) 1980-12-09 1980-12-09 Microwave plasma treating device

Country Status (1)

Country Link
JP (1) JPS5796528A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS536239A (en) * 1976-07-08 1978-01-20 Nippon Electric Co Plasma etching method
JPS5424580A (en) * 1977-07-27 1979-02-23 Toshiba Corp Etching method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS536239A (en) * 1976-07-08 1978-01-20 Nippon Electric Co Plasma etching method
JPS5424580A (en) * 1977-07-27 1979-02-23 Toshiba Corp Etching method

Similar Documents

Publication Publication Date Title
KR850000901A (en) Microwave plasma treatment method and apparatus
KR880011894A (en) Downstream microwave plasma processing device with improved coupling structure between microwave and plasma
JPS5518403A (en) Formation of organic thin film
JPS56105482A (en) Plasma etching device
JPS5747876A (en) Plasma etching apparatus and method
EP0382065A3 (en) Apparatus for plasma processing
JPS51134950A (en) High-frequency heating device
EP0402867A3 (en) Apparatus for microwave processing in a magnetic field
JPS5796528A (en) Microwave plasma treating device
JPS53136739A (en) Microwave oven
JPS5773174A (en) Manufacturing apparatus for coating film
JPS5636128A (en) Reaction type ion plating device
JPS6446916A (en) Vacuum thin-film formation device
JPS5417015A (en) Radiation sensitive composite
JPS59208838A (en) Microwave plasma treating device
JPS544571A (en) Plasma treating apparatus
JPS5759149A (en) Apparatus of emission spectroanalysis
JPS5448348A (en) High frequency heating apparatus
JPS55128584A (en) Plasma etching device
JPS521738A (en) High frequency heating apparatus
JPS57201030A (en) Heat treatment for semiconductor wafer
JPS53126260A (en) Vapor phase reaction heating susceptor of semiconductor
JPS579868A (en) Surface treating apparatus with microwave plasma
JPS53142334A (en) Glow discharge surface treating apparatus
JPS5531240A (en) High frequency heater