JPS5632317A - Manufacture of amorphous silicon film - Google Patents

Manufacture of amorphous silicon film

Info

Publication number
JPS5632317A
JPS5632317A JP8968379A JP8968379A JPS5632317A JP S5632317 A JPS5632317 A JP S5632317A JP 8968379 A JP8968379 A JP 8968379A JP 8968379 A JP8968379 A JP 8968379A JP S5632317 A JPS5632317 A JP S5632317A
Authority
JP
Japan
Prior art keywords
substrate
container
silicon
evacuated
torr
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8968379A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6353123B2 (enExample
Inventor
Akio Hara
Nobuhiko Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP8968379A priority Critical patent/JPS5632317A/ja
Publication of JPS5632317A publication Critical patent/JPS5632317A/ja
Publication of JPS6353123B2 publication Critical patent/JPS6353123B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021Reactive sputtering or evaporation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP8968379A 1979-07-13 1979-07-13 Manufacture of amorphous silicon film Granted JPS5632317A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8968379A JPS5632317A (en) 1979-07-13 1979-07-13 Manufacture of amorphous silicon film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8968379A JPS5632317A (en) 1979-07-13 1979-07-13 Manufacture of amorphous silicon film

Publications (2)

Publication Number Publication Date
JPS5632317A true JPS5632317A (en) 1981-04-01
JPS6353123B2 JPS6353123B2 (enExample) 1988-10-21

Family

ID=13977555

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8968379A Granted JPS5632317A (en) 1979-07-13 1979-07-13 Manufacture of amorphous silicon film

Country Status (1)

Country Link
JP (1) JPS5632317A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5730326A (en) * 1980-07-30 1982-02-18 Sekisui Chem Co Ltd Manufacture of thin film semiconductor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5730326A (en) * 1980-07-30 1982-02-18 Sekisui Chem Co Ltd Manufacture of thin film semiconductor

Also Published As

Publication number Publication date
JPS6353123B2 (enExample) 1988-10-21

Similar Documents

Publication Publication Date Title
JPS5777021A (en) Manufacture of amorphous silicon
EP0919643A3 (en) Method of forming microcrystalline silicon film, photovoltaic element, and method of producing same
JPS5730325A (en) Manufacture of amorphous silicon thin film
JPS56133884A (en) Manufacture of photoelectric transducer
JPS5591968A (en) Film forming method by glow discharge
JPS5632317A (en) Manufacture of amorphous silicon film
JPS57134555A (en) Method and device for forming thin film
WO1994016825A1 (en) Microwave energized process for the preparation of high quality semiconductor material
JPS5745226A (en) Manufacture of thin film semiconductor
JPS5633475A (en) Manufacture of exterior ornamental parts
JPS577811A (en) Manufacture of amorphous silicon film
JPS5730326A (en) Manufacture of thin film semiconductor
JPS5678411A (en) Preparation of noncrystalline silicon film
JPS577116A (en) Manufacture of amorphous silicon thin film
JPS5614408A (en) Manufacture of solid electrolyte
JPS5742523A (en) Preparation of amorphous silicon film
US5073804A (en) Method of forming semiconductor materials and barriers
JP2000196118A (ja) 太陽電池の製造方法
RU2003121094A (ru) Способ получения алмазоподобных пленок для инкапсуляции солнечных фотоэлектрических элементов
JPS5727914A (en) Manufacture of thin silicon carbide film
CN118053916A (zh) 晶硅电池、制备方法及光伏电站
JPS57160909A (en) Formation of thin amorphous silicon hydride film
JPS57153436A (en) Semiconductor device
JPS5678412A (en) Preparation of noncrystalline silicone film
JPH0639708B2 (ja) 薄膜製造方法及び薄膜製造装置