JPS577811A - Manufacture of amorphous silicon film - Google Patents
Manufacture of amorphous silicon filmInfo
- Publication number
- JPS577811A JPS577811A JP8333880A JP8333880A JPS577811A JP S577811 A JPS577811 A JP S577811A JP 8333880 A JP8333880 A JP 8333880A JP 8333880 A JP8333880 A JP 8333880A JP S577811 A JPS577811 A JP S577811A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- film
- amorphous silicon
- manufacture
- torr
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
PURPOSE:To manufacture an amorphous silicon film with favorable characteristics such as photoconductivity and doping efficiency by growing an amorphous silicon film on a substrate by plasma CVD, sputtering or other method and cooling the substrate in hydrogen plasma. CONSTITUTION:A vacuum vessel 1 is evacuated to about 10<-7> Torr, and a substrate 3 on a substrate holder 2 is heated to about 300 deg.C. Gaseous H2 is fed into the vessel 1 to regulate the internal pressure of the vessel to 10<-1>-10<-6> Torr. Silicon as an evaporation source 4 is evaporated by high frequency heating or other heating method. The evaporated silicon is ionized with an ionizing electrode 7 having DC or AC potential together with H2 to form a plasma state, and a hydrogenated amorphous silicon (a-Si) film is formed on the substrate 3. After completing the deposition of the a-Si film on the substrate 3, the heating of the source 4 is stopped, and while generating hydrogen plasma with the above-mentioned ionizing means in an H2 atmosphere under 10-10<-6> Torr, the substrate 3 is cooled to manufacture the desired a-Si film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8333880A JPS577811A (en) | 1980-06-18 | 1980-06-18 | Manufacture of amorphous silicon film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8333880A JPS577811A (en) | 1980-06-18 | 1980-06-18 | Manufacture of amorphous silicon film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS577811A true JPS577811A (en) | 1982-01-16 |
| JPH026831B2 JPH026831B2 (en) | 1990-02-14 |
Family
ID=13799642
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8333880A Granted JPS577811A (en) | 1980-06-18 | 1980-06-18 | Manufacture of amorphous silicon film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS577811A (en) |
-
1980
- 1980-06-18 JP JP8333880A patent/JPS577811A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH026831B2 (en) | 1990-02-14 |
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