JPS5630772A - Manufacture of photoconductive element - Google Patents

Manufacture of photoconductive element

Info

Publication number
JPS5630772A
JPS5630772A JP10637379A JP10637379A JPS5630772A JP S5630772 A JPS5630772 A JP S5630772A JP 10637379 A JP10637379 A JP 10637379A JP 10637379 A JP10637379 A JP 10637379A JP S5630772 A JPS5630772 A JP S5630772A
Authority
JP
Japan
Prior art keywords
transparent conductive
conductive film
in2te3
znse
crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10637379A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6327870B2 (oth
Inventor
Katsumi Itagaki
Junta Yamamoto
Tetsuo Kamikado
Koichi Nomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP10637379A priority Critical patent/JPS5630772A/ja
Publication of JPS5630772A publication Critical patent/JPS5630772A/ja
Publication of JPS6327870B2 publication Critical patent/JPS6327870B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3428—Sulfides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3431—Selenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3432—Tellurides

Landscapes

  • Light Receiving Elements (AREA)
JP10637379A 1979-08-20 1979-08-20 Manufacture of photoconductive element Granted JPS5630772A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10637379A JPS5630772A (en) 1979-08-20 1979-08-20 Manufacture of photoconductive element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10637379A JPS5630772A (en) 1979-08-20 1979-08-20 Manufacture of photoconductive element

Publications (2)

Publication Number Publication Date
JPS5630772A true JPS5630772A (en) 1981-03-27
JPS6327870B2 JPS6327870B2 (oth) 1988-06-06

Family

ID=14431910

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10637379A Granted JPS5630772A (en) 1979-08-20 1979-08-20 Manufacture of photoconductive element

Country Status (1)

Country Link
JP (1) JPS5630772A (oth)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4868615A (en) * 1986-09-26 1989-09-19 Kabushiki Kaisha Toshiba Semiconductor light emitting device using group I and group VII dopants

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4868615A (en) * 1986-09-26 1989-09-19 Kabushiki Kaisha Toshiba Semiconductor light emitting device using group I and group VII dopants

Also Published As

Publication number Publication date
JPS6327870B2 (oth) 1988-06-06

Similar Documents

Publication Publication Date Title
JPS646925A (en) Liquid crystal display device and manufacture thereof
US4213676A (en) Liquid crystal display for reflection operation with a guest-host liquid crystal layer and method of making
JPS5630772A (en) Manufacture of photoconductive element
JPS563443A (en) Information recording component
JP2848795B2 (ja) 金属酸化物薄層の付着方法及び付着装置
JPS5490998A (en) Liquid crystal display unit
JPS5640811A (en) Multilayer ec display element
GB1338337A (en) Cadmium sulphide thin film sustained conductivity device and method for making same
JPS575372A (en) Thin film diode and manufacture thereof
JPS5659234A (en) Mask reinforcing method
JPS54102998A (en) Display unit and its manufacture
JPS56109432A (en) Manufacture of gas discharge panel
JPS55142316A (en) Liquid crystal display device
JPS55161245A (en) Preparation of radiation sensitive electrophotographic receptor
JPS55106418A (en) Liquid crystal display device
JPS57208041A (en) Photoconductive target and its manufacture
JPS5742537A (en) Preparation of transparent electrically-conductive film of indium oxide
JPS57119434A (en) Manufacture of photoelectric conversion target
JPS60142576A (ja) 薄膜太陽電池基板
JPS6451519A (en) Manufacture of grid substrate of digitizer
JPS5323266A (en) Manufacture of fluorescent screen
JPS57148690A (en) Recording sheet
JPS55135818A (en) Manufacture of liquid crystal display device
JPS56134730A (en) Production of thin film by sputtering
JPS5576556A (en) Driving method of cathode ray picture plate