JPS5626441A - Method for etching - Google Patents

Method for etching

Info

Publication number
JPS5626441A
JPS5626441A JP10221879A JP10221879A JPS5626441A JP S5626441 A JPS5626441 A JP S5626441A JP 10221879 A JP10221879 A JP 10221879A JP 10221879 A JP10221879 A JP 10221879A JP S5626441 A JPS5626441 A JP S5626441A
Authority
JP
Japan
Prior art keywords
etching
metal
etched
electrons generated
ionization tendency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10221879A
Other languages
Japanese (ja)
Inventor
Masaaki Sato
Mutsunobu Arita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP10221879A priority Critical patent/JPS5626441A/en
Publication of JPS5626441A publication Critical patent/JPS5626441A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To apply good photo etching by electrically connecting an etched metal and a metal with a smaller ionization tendency than the etched metal wherein both metals are immersed in etchants. CONSTITUTION:Electrons generated by metal dissolution flow into a metal with a small ionization tendency and reducing reaction occurs on the metal. Therefore, the reducing reaction around the surface of a etched metal is prevented and good etching will be performed to eliminate residual etching. If the flow of electrons generated by reaction at the time of etching is monitored by an ammeter, the progress of photo etching will quantitatively be recognized. And etching control is easy and accurate.
JP10221879A 1979-08-13 1979-08-13 Method for etching Pending JPS5626441A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10221879A JPS5626441A (en) 1979-08-13 1979-08-13 Method for etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10221879A JPS5626441A (en) 1979-08-13 1979-08-13 Method for etching

Publications (1)

Publication Number Publication Date
JPS5626441A true JPS5626441A (en) 1981-03-14

Family

ID=14321518

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10221879A Pending JPS5626441A (en) 1979-08-13 1979-08-13 Method for etching

Country Status (1)

Country Link
JP (1) JPS5626441A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5256854A (en) * 1975-11-05 1977-05-10 Nec Corp Production of porous silicon

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5256854A (en) * 1975-11-05 1977-05-10 Nec Corp Production of porous silicon

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