JPS55100241A - Metal oxide film etching method - Google Patents

Metal oxide film etching method

Info

Publication number
JPS55100241A
JPS55100241A JP338479A JP338479A JPS55100241A JP S55100241 A JPS55100241 A JP S55100241A JP 338479 A JP338479 A JP 338479A JP 338479 A JP338479 A JP 338479A JP S55100241 A JPS55100241 A JP S55100241A
Authority
JP
Japan
Prior art keywords
metal oxide
etching
oxide film
soln
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP338479A
Other languages
Japanese (ja)
Inventor
Hideo Sawai
Yoshinori Arao
Takashi Kanamori
Masayuki Nihei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP338479A priority Critical patent/JPS55100241A/en
Publication of JPS55100241A publication Critical patent/JPS55100241A/en
Pending legal-status Critical Current

Links

Landscapes

  • Oxygen, Ozone, And Oxides In General (AREA)

Abstract

PURPOSE: To safely perform etching of a metal oxide film at a high and stable etching speed while reducing contamination of an etching soln. and improving accuracy and uniformity by applying hydrogen generated by electrolysis to metal oxide on the surface of a substrate.
CONSTITUTION: Metal oxide on the surface of a substrate such as glass is etched with hydrogen generated by electrolysis. For example, 6H HCl as an etching soln., a carbon anode and a platinum cathode are used. The temp. of the soln. is adjusted to 40°C, and etching time to 10sec. The cathode and the sample to be etched are pref. made equal in size so that hydrogen generated from the cathode is uniformly applied to the sample.
COPYRIGHT: (C)1980,JPO&Japio
JP338479A 1979-01-18 1979-01-18 Metal oxide film etching method Pending JPS55100241A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP338479A JPS55100241A (en) 1979-01-18 1979-01-18 Metal oxide film etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP338479A JPS55100241A (en) 1979-01-18 1979-01-18 Metal oxide film etching method

Publications (1)

Publication Number Publication Date
JPS55100241A true JPS55100241A (en) 1980-07-31

Family

ID=11555855

Family Applications (1)

Application Number Title Priority Date Filing Date
JP338479A Pending JPS55100241A (en) 1979-01-18 1979-01-18 Metal oxide film etching method

Country Status (1)

Country Link
JP (1) JPS55100241A (en)

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