JPS57154834A - Etching method by reactive ion - Google Patents

Etching method by reactive ion

Info

Publication number
JPS57154834A
JPS57154834A JP3949381A JP3949381A JPS57154834A JP S57154834 A JPS57154834 A JP S57154834A JP 3949381 A JP3949381 A JP 3949381A JP 3949381 A JP3949381 A JP 3949381A JP S57154834 A JPS57154834 A JP S57154834A
Authority
JP
Japan
Prior art keywords
gas
sample
reactive
electrodes
atoms
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3949381A
Other languages
Japanese (ja)
Inventor
Masahiro Shibagaki
Hiroshi Takeuchi
Toru Watanabe
Yoshiya Ueda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3949381A priority Critical patent/JPS57154834A/en
Publication of JPS57154834A publication Critical patent/JPS57154834A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To form the pattern of high accuracy, which forms no residue, by gasifying a high molecular film consisting of C-F components formed onto polycrystal line silicon by CF4 gas and etching a sample by the mixed gas of CF3Br+ Cl2. CONSTITUTION:A reactive gas consisting of CF3X and (X2) or (X')2 (X and X' are atoms of halogens except fluorine) is introduced by a reactive ion etching device, which has parallel slat electrodes 2, 5, which are arranged mutually oppositely and to which high-frequency power is applied, the sample 7 of which a pattern must be formed is placed at the side thereof to which high-frequency power is applied and which generates palsma between the electrodes 2, 5, and the sample 7 is etched by the reactive ions. In this case, the combined gas or mixed gas of C-F bonds and H atoms and carbon tetrafluoride are introduced successively before the reactive gas is introduced and changed into gas plasma and irradiate on eace sample 7.
JP3949381A 1981-03-20 1981-03-20 Etching method by reactive ion Pending JPS57154834A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3949381A JPS57154834A (en) 1981-03-20 1981-03-20 Etching method by reactive ion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3949381A JPS57154834A (en) 1981-03-20 1981-03-20 Etching method by reactive ion

Publications (1)

Publication Number Publication Date
JPS57154834A true JPS57154834A (en) 1982-09-24

Family

ID=12554573

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3949381A Pending JPS57154834A (en) 1981-03-20 1981-03-20 Etching method by reactive ion

Country Status (1)

Country Link
JP (1) JPS57154834A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61255027A (en) * 1985-05-07 1986-11-12 Toshiba Corp Dryetching process
WO1990013909A1 (en) * 1989-05-12 1990-11-15 Tadahiro Ohmi Reactive ion etching apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61255027A (en) * 1985-05-07 1986-11-12 Toshiba Corp Dryetching process
JPH0467777B2 (en) * 1985-05-07 1992-10-29 Tokyo Shibaura Electric Co
WO1990013909A1 (en) * 1989-05-12 1990-11-15 Tadahiro Ohmi Reactive ion etching apparatus

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