JPS5623777A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5623777A
JPS5623777A JP9813379A JP9813379A JPS5623777A JP S5623777 A JPS5623777 A JP S5623777A JP 9813379 A JP9813379 A JP 9813379A JP 9813379 A JP9813379 A JP 9813379A JP S5623777 A JPS5623777 A JP S5623777A
Authority
JP
Japan
Prior art keywords
short
region
base region
circuiting
holes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9813379A
Other languages
Japanese (ja)
Other versions
JPS6154260B2 (en
Inventor
Yukio Igarashi
Toshio Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9813379A priority Critical patent/JPS5623777A/en
Publication of JPS5623777A publication Critical patent/JPS5623777A/en
Publication of JPS6154260B2 publication Critical patent/JPS6154260B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To obtain the semiconductor device of superior characteristic having emitter short-circuiting holes being distributed between plural emitter regions provided in a base region by a method wherein other short-circuiting holes are provided in addition, and the resistance value of a path in the base region is measured to control the subsequent process. CONSTITUTION:An N1-type base region 2 and a P2-type base region 3 are formed being stacked on a P1-type anode region 1, and plural N2-type emitter regions 4 are provided in the region 3 to constitute a thyristor or a TRIAC having emitter short- circuiting holes 5n being distributed between them penetrating the region 4. In this constitution, other short-circuiting holes 5l and 5m for measurement are newly provided being located at the both sides of the short-circuiting holes 5n and electrodes 9l and 9m are adhered to them, and a current is made to flow from an electric source 10 to a path in the layer 3 through the electrodes to measure the resistance value Rp of the layer 3. By this way, the subsequent diffusion process is controlled to attain to a desired value of the resistance Rp, and the excess and the dificiency of Rp is eliminated to obtain a high sensitivity.
JP9813379A 1979-08-02 1979-08-02 Manufacture of semiconductor device Granted JPS5623777A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9813379A JPS5623777A (en) 1979-08-02 1979-08-02 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9813379A JPS5623777A (en) 1979-08-02 1979-08-02 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5623777A true JPS5623777A (en) 1981-03-06
JPS6154260B2 JPS6154260B2 (en) 1986-11-21

Family

ID=14211742

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9813379A Granted JPS5623777A (en) 1979-08-02 1979-08-02 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5623777A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5482147A (en) * 1977-12-14 1979-06-30 Yagi Antenna Directional antenna feeder

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5482147A (en) * 1977-12-14 1979-06-30 Yagi Antenna Directional antenna feeder

Also Published As

Publication number Publication date
JPS6154260B2 (en) 1986-11-21

Similar Documents

Publication Publication Date Title
JPS5623777A (en) Manufacture of semiconductor device
GB914837A (en) Semiconductor devices
JPS55102267A (en) Semiconductor control element
JPS55127061A (en) Manufacture of semiconductor memory
JPS56130969A (en) Semiconductor device
JPS5718360A (en) Gate controlling semiconductor element
US3539401A (en) Method of manufacturing mechano-electrical transducer
JPS57104254A (en) Lateral-transistor
JPS5731173A (en) Semiconductor device
JPS5679469A (en) Semiconductor device and its preparing method
JPS55105367A (en) Semiconductor device
JPS57206072A (en) Semiconductor device
JPS55103772A (en) Semiconductor device
US3461546A (en) Tunnel diode manufacturing apparatus
JPS55132052A (en) Semiconductor device
JPS57152140A (en) Measurement of characteristic of semiconductor device
JPS55115360A (en) Unit for inspecting lot
JPS562669A (en) Semiconductor device
JPS6085562A (en) Thyristor
JPS5681970A (en) Semiconductor switching device
JPS5752162A (en) Semiconductor device
JPS5633855A (en) Semiconductor device and its manufacture
JPS5799772A (en) Semiconductor rectifying device
JPS572530A (en) Manufacture of semiconductor device
JPS5780769A (en) Semiconductor device