JPS5617093A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPS5617093A JPS5617093A JP9295479A JP9295479A JPS5617093A JP S5617093 A JPS5617093 A JP S5617093A JP 9295479 A JP9295479 A JP 9295479A JP 9295479 A JP9295479 A JP 9295479A JP S5617093 A JPS5617093 A JP S5617093A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- carrier
- active layer
- refractive index
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000004020 luminiscence type Methods 0.000 abstract 1
- 230000010355 oscillation Effects 0.000 abstract 1
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 230000006798 recombination Effects 0.000 abstract 1
- 238000005215 recombination Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
Landscapes
- Semiconductor Lasers (AREA)
- Weting (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9295479A JPS5617093A (en) | 1979-07-20 | 1979-07-20 | Semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9295479A JPS5617093A (en) | 1979-07-20 | 1979-07-20 | Semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5617093A true JPS5617093A (en) | 1981-02-18 |
| JPS6154279B2 JPS6154279B2 (enrdf_load_stackoverflow) | 1986-11-21 |
Family
ID=14068843
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9295479A Granted JPS5617093A (en) | 1979-07-20 | 1979-07-20 | Semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5617093A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61236189A (ja) * | 1985-04-11 | 1986-10-21 | Sharp Corp | 半導体レ−ザ素子 |
| JPH01175738U (enrdf_load_stackoverflow) * | 1988-05-30 | 1989-12-14 |
-
1979
- 1979-07-20 JP JP9295479A patent/JPS5617093A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61236189A (ja) * | 1985-04-11 | 1986-10-21 | Sharp Corp | 半導体レ−ザ素子 |
| US4754462A (en) * | 1985-04-11 | 1988-06-28 | Sharp Kabushiki Kaisha | Semiconductor laser device with a V-channel and a mesa |
| JPH01175738U (enrdf_load_stackoverflow) * | 1988-05-30 | 1989-12-14 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6154279B2 (enrdf_load_stackoverflow) | 1986-11-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0000412A2 (en) | Semiconductor injection laser or intensifier | |
| US5949807A (en) | Semiconductor laser device | |
| US4162460A (en) | Optical circuit element | |
| US4916709A (en) | Semiconductor laser device | |
| JPS5617093A (en) | Semiconductor laser | |
| US4350960A (en) | Self saturating semiconductor lasers | |
| JPH0426558B2 (enrdf_load_stackoverflow) | ||
| JPS6482587A (en) | Quantum well type semiconductor laser | |
| GB2095474A (en) | Semiconductor light emitting devices | |
| JPS58225681A (ja) | 半導体レ−ザ素子 | |
| Engelmann et al. | Lateral waveguiding in stripe-geometry double-heterostructure lasers below the lasing threshold | |
| KR100611951B1 (ko) | 표면광 레이저 | |
| JPS564293A (en) | Manufacture of semiconductor laser device | |
| JPS6136720B2 (enrdf_load_stackoverflow) | ||
| JPS6482594A (en) | Semiconductor laser device and manufacture thereof | |
| JPS593872B2 (ja) | 半導体発光装置の製造方法 | |
| JPS6244439B2 (enrdf_load_stackoverflow) | ||
| JPS57112090A (en) | Semiconductor laser | |
| JPS56112783A (en) | Semiconductor laser | |
| JPS55166975A (en) | Manufacture of semiconductor light emitting device | |
| JPS6155276B2 (enrdf_load_stackoverflow) | ||
| JPS57157587A (en) | Semiconductor laser device | |
| JPS6441291A (en) | Semiconductor laser | |
| JPS5642397A (en) | Structure of semiconductor laser element | |
| JPH0211025B2 (enrdf_load_stackoverflow) |