JPS56169736A - Preparation of high purity aluminum - Google Patents

Preparation of high purity aluminum

Info

Publication number
JPS56169736A
JPS56169736A JP7270580A JP7270580A JPS56169736A JP S56169736 A JPS56169736 A JP S56169736A JP 7270580 A JP7270580 A JP 7270580A JP 7270580 A JP7270580 A JP 7270580A JP S56169736 A JPS56169736 A JP S56169736A
Authority
JP
Japan
Prior art keywords
aluminum
stirrer
crucible
solidification
high purity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7270580A
Other languages
Japanese (ja)
Other versions
JPS5941500B2 (en
Inventor
Shiro Terai
Sakae Kato
Masahiro Nishio
Masaya Imai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Light Metal Industries Ltd
Original Assignee
Sumitomo Light Metal Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Light Metal Industries Ltd filed Critical Sumitomo Light Metal Industries Ltd
Priority to JP7270580A priority Critical patent/JPS5941500B2/en
Publication of JPS56169736A publication Critical patent/JPS56169736A/en
Publication of JPS5941500B2 publication Critical patent/JPS5941500B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Manufacture And Refinement Of Metals (AREA)

Abstract

PURPOSE: To prepare a high purity aluminum, by using very simple equipment and operation to cool molten aluminum in a crucible from the bottom and to draw up a stirrer while stirring in the crucible in accordance with the solidification growth of the aluminum.
CONSTITUTION: The molten aluminum to be purified having a temperature of 658W695°C is thrown into graphite crucible 1 and graphite stirrer 3 is placed in the crucible. A cooling gas such as air is injected 8 to the bottom of crucible 1 to adjust the bottom temperature to a temperature of 650W690°C, thereby initiating the aluminum solidification. In this case, the operation is performed at a solidification growth rate of 0.1W2.5mm/sec, the revolution number of stirrer 3 being set at a value of 40W350r.p.m. During the period, the solidification growth rate of aluminum is determined by adjusting the drawing up rate of stirrer 3 based on the result. At the time when the solidification amount in accordance with the desired purity of purified aluminum is reached, stirrer 3 is lifted and immediately impure mother liquor remaining in the leadle is removed. Thereby, the solidified layer of the titled high purity aluminum is obtained.
COPYRIGHT: (C)1981,JPO&Japio
JP7270580A 1980-06-02 1980-06-02 Manufacturing method of high purity aluminum Expired JPS5941500B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7270580A JPS5941500B2 (en) 1980-06-02 1980-06-02 Manufacturing method of high purity aluminum

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7270580A JPS5941500B2 (en) 1980-06-02 1980-06-02 Manufacturing method of high purity aluminum

Publications (2)

Publication Number Publication Date
JPS56169736A true JPS56169736A (en) 1981-12-26
JPS5941500B2 JPS5941500B2 (en) 1984-10-08

Family

ID=13497027

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7270580A Expired JPS5941500B2 (en) 1980-06-02 1980-06-02 Manufacturing method of high purity aluminum

Country Status (1)

Country Link
JP (1) JPS5941500B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58104132A (en) * 1981-12-14 1983-06-21 Mitsubishi Keikinzoku Kogyo Kk Purifying method for aluminum
CN111575501A (en) * 2020-06-24 2020-08-25 江苏金海铝业有限公司 Method for extracting ultra-high purity aluminum by directional solidification under electromagnetic stirring

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58104132A (en) * 1981-12-14 1983-06-21 Mitsubishi Keikinzoku Kogyo Kk Purifying method for aluminum
JPH0137458B2 (en) * 1981-12-14 1989-08-07 Kasei Naoetsu Kk
CN111575501A (en) * 2020-06-24 2020-08-25 江苏金海铝业有限公司 Method for extracting ultra-high purity aluminum by directional solidification under electromagnetic stirring

Also Published As

Publication number Publication date
JPS5941500B2 (en) 1984-10-08

Similar Documents

Publication Publication Date Title
JPS5556098A (en) Method and apparatus for producing si single crystal rod
JPS56169736A (en) Preparation of high purity aluminum
JPS57205397A (en) Method and apparatus for growing single crystal
JPS5534115A (en) Crystallization method
JPS5413477A (en) Continuous growing apparatus for single crystal
JPS5276277A (en) Producing long and narrow crystal
JPS57155334A (en) Production of al-ti-b alloy for grain refining
JPS57160567A (en) Purifying method for metal
JPS5361577A (en) Growing method for horizontally pulled ribbon crystal
JPS56149399A (en) Liquid phase epitaxial growing method
JPS56163226A (en) Refining method of aluminum
JPS57188497A (en) Container for pulling up silicon single crystal
JPS55140800A (en) Crucible for crystal growing crucible device
JPS57205395A (en) Manufacture of crystal substrate
JPS56112429A (en) Purifying method for impure aluminum
JPS54152683A (en) Growing method for single crystal
JPS5523070A (en) Production of lithium tantalate single crystal
JPS5738396A (en) Manufacture of single crystal
JPS52138095A (en) Growth of sapphire single crystal
JPS5543121A (en) Removal of monomer from polystyrene resin
JPS56114900A (en) Preparation of insb single crystal
JPS55140792A (en) Manufacture of 3-5 group compound semiconductor single crystal
JPS57166395A (en) Preparing apparatus of ribbon-like crystal
JPS57129896A (en) Liquid phase epitaxial growing apparatus
JPS5684397A (en) Single crystal growing method