JPS56165353A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56165353A
JPS56165353A JP6974680A JP6974680A JPS56165353A JP S56165353 A JPS56165353 A JP S56165353A JP 6974680 A JP6974680 A JP 6974680A JP 6974680 A JP6974680 A JP 6974680A JP S56165353 A JPS56165353 A JP S56165353A
Authority
JP
Japan
Prior art keywords
region
depletion layer
type
junction
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6974680A
Other languages
Japanese (ja)
Inventor
Hideo Sakauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6974680A priority Critical patent/JPS56165353A/en
Publication of JPS56165353A publication Critical patent/JPS56165353A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To obtain a semiconductor device, which ensures high reliability and high pressure withstand property, by a method wherein a concave section is formed around a junction reversely biased, and a field-ring is made up. CONSTITUTION:A P type base region 2 and an N type emitter region 3 are built up in an N type collector region 1. A widening region of a depletion layer on the surface of the collector region is removed by means of etching, and lowered more than the surface of the base region. A P type field-ring 4 is made up to the widening region of the depletion layer. Glass powder is deposited by means of an electrophoresis method, and baked and a surface stabilized film 6 is built up. Since A high concentration section of the surface is removed after forming the base, the width of the depletion layer can be broadened, and a device withstand high pressure. The field-rig can be formed in a shape deeper than a collector junction, and an extent of the depletion layer at a junction curved section can be increased.
JP6974680A 1980-05-26 1980-05-26 Semiconductor device Pending JPS56165353A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6974680A JPS56165353A (en) 1980-05-26 1980-05-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6974680A JPS56165353A (en) 1980-05-26 1980-05-26 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56165353A true JPS56165353A (en) 1981-12-18

Family

ID=13411666

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6974680A Pending JPS56165353A (en) 1980-05-26 1980-05-26 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56165353A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4934778A (en) * 1972-07-31 1974-03-30
JPS54111287A (en) * 1978-02-21 1979-08-31 Fuji Electric Co Ltd Resin seal planar-structure semiconductor element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4934778A (en) * 1972-07-31 1974-03-30
JPS54111287A (en) * 1978-02-21 1979-08-31 Fuji Electric Co Ltd Resin seal planar-structure semiconductor element

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