JPS56165327A - Method and apparatus for monitoring plasma etching - Google Patents
Method and apparatus for monitoring plasma etchingInfo
- Publication number
- JPS56165327A JPS56165327A JP6896080A JP6896080A JPS56165327A JP S56165327 A JPS56165327 A JP S56165327A JP 6896080 A JP6896080 A JP 6896080A JP 6896080 A JP6896080 A JP 6896080A JP S56165327 A JPS56165327 A JP S56165327A
- Authority
- JP
- Japan
- Prior art keywords
- high frequency
- etching
- gas
- frequency power
- etching process
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title abstract 5
- 238000001020 plasma etching Methods 0.000 title abstract 3
- 238000012544 monitoring process Methods 0.000 title abstract 2
- 238000005530 etching Methods 0.000 abstract 5
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6896080A JPS56165327A (en) | 1980-05-26 | 1980-05-26 | Method and apparatus for monitoring plasma etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6896080A JPS56165327A (en) | 1980-05-26 | 1980-05-26 | Method and apparatus for monitoring plasma etching |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56165327A true JPS56165327A (en) | 1981-12-18 |
| JPH0261140B2 JPH0261140B2 (enrdf_load_stackoverflow) | 1990-12-19 |
Family
ID=13388744
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6896080A Granted JPS56165327A (en) | 1980-05-26 | 1980-05-26 | Method and apparatus for monitoring plasma etching |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56165327A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58140126A (ja) * | 1982-02-16 | 1983-08-19 | Matsushita Electric Ind Co Ltd | ドライエツチング方法 |
| US5284547A (en) * | 1991-01-22 | 1994-02-08 | Tokyo Electron Limited | Plasma-process system with batch scheme |
| US5352902A (en) * | 1992-07-06 | 1994-10-04 | Tokyo Electron Kabushiki Kaisha | Method for controlling plasma surface-treatments with a plurality of photodetectors and optical filters |
| JP2009013470A (ja) * | 2007-07-05 | 2009-01-22 | Ulvac Japan Ltd | 薄膜形成方法 |
-
1980
- 1980-05-26 JP JP6896080A patent/JPS56165327A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58140126A (ja) * | 1982-02-16 | 1983-08-19 | Matsushita Electric Ind Co Ltd | ドライエツチング方法 |
| US5284547A (en) * | 1991-01-22 | 1994-02-08 | Tokyo Electron Limited | Plasma-process system with batch scheme |
| US5352902A (en) * | 1992-07-06 | 1994-10-04 | Tokyo Electron Kabushiki Kaisha | Method for controlling plasma surface-treatments with a plurality of photodetectors and optical filters |
| JP2009013470A (ja) * | 2007-07-05 | 2009-01-22 | Ulvac Japan Ltd | 薄膜形成方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0261140B2 (enrdf_load_stackoverflow) | 1990-12-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR890012367A (ko) | 에칭 장치 및 방법 | |
| WO2002029884A3 (en) | Detection of process endpoint through monitoring fluctuation of output data | |
| KR900014772A (ko) | 입자오염을 최소화시키는 유체 유동 제어방법과 그 장치 | |
| JPS56165327A (en) | Method and apparatus for monitoring plasma etching | |
| EP0322981A3 (en) | Apparatus for determining rate of discharge from nozzle for spraying aqueous solution of hydrogen peroxide | |
| ES8400823A1 (es) | Procedimiento y dispositivo de interrogacion de un detector de contenido de gas combustible. | |
| JPS57198850A (en) | Monitoring method for state or exfoliation of insulation coating of electric wire | |
| JPS55118637A (en) | Plasma etching apparatus | |
| JPH0314229A (ja) | 終点検出装置 | |
| JPS5723226A (en) | Plasma etching device | |
| JPS5613416A (en) | Method and apparatus for detecting breakage of cooling facility of blast furnace wall | |
| JPS6223113A (ja) | 終点検出方法 | |
| JPH02111020A (ja) | プラズマ処理装置 | |
| DE3375207D1 (en) | Method of and device for testing the initial tensions of an annular cutting-off wheel | |
| JPS5233585A (en) | Device for controlling contact pressure of probe for ultrasonic flaw de tectors | |
| JPS6423537A (en) | Plasma processing device | |
| JPS54154880A (en) | Device for detecting abnormality on cutting tool | |
| JPS552719A (en) | Detecting method for end point of etching | |
| EP0255265A3 (en) | Plasma etching process and apparatus | |
| JPS6324263U (enrdf_load_stackoverflow) | ||
| JPS55150919A (en) | Plasma etching method and its apparatus | |
| JPS6415953A (en) | Dry etching method | |
| JPS57120672A (en) | Plasma etching method | |
| JPS55149032A (en) | Pressure fluctuation abnormality detector | |
| JPS5455377A (en) | End point detection method in dry etching |