JPS56161644A - Dry etching method - Google Patents

Dry etching method

Info

Publication number
JPS56161644A
JPS56161644A JP6481280A JP6481280A JPS56161644A JP S56161644 A JPS56161644 A JP S56161644A JP 6481280 A JP6481280 A JP 6481280A JP 6481280 A JP6481280 A JP 6481280A JP S56161644 A JPS56161644 A JP S56161644A
Authority
JP
Japan
Prior art keywords
etching
magnet
electrode
electrodes
apply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6481280A
Other languages
English (en)
Inventor
Shinya Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6481280A priority Critical patent/JPS56161644A/ja
Publication of JPS56161644A publication Critical patent/JPS56161644A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP6481280A 1980-05-16 1980-05-16 Dry etching method Pending JPS56161644A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6481280A JPS56161644A (en) 1980-05-16 1980-05-16 Dry etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6481280A JPS56161644A (en) 1980-05-16 1980-05-16 Dry etching method

Publications (1)

Publication Number Publication Date
JPS56161644A true JPS56161644A (en) 1981-12-12

Family

ID=13269023

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6481280A Pending JPS56161644A (en) 1980-05-16 1980-05-16 Dry etching method

Country Status (1)

Country Link
JP (1) JPS56161644A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57159026A (en) * 1981-03-27 1982-10-01 Toshiba Corp Dry etching method
JPS58151028A (ja) * 1982-01-26 1983-09-08 マテリアルズ・リサ−チ・コ−ポレ−シヨン 磁気的に強められたプラズマ処理方法および装置
JPS58170016A (ja) * 1982-03-31 1983-10-06 Tokuda Seisakusho Ltd プラズマエツチング装置
US4526643A (en) * 1983-03-24 1985-07-02 Tokyo Shibaura Denki Kabushiki Kaisha Dry etching apparatus using reactive ions
JPS62271432A (ja) * 1986-11-28 1987-11-25 Toshiba Corp ドライエツチング装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS537586A (en) * 1976-02-19 1978-01-24 Sloan Technology Corp Cathodic spattering apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS537586A (en) * 1976-02-19 1978-01-24 Sloan Technology Corp Cathodic spattering apparatus

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57159026A (en) * 1981-03-27 1982-10-01 Toshiba Corp Dry etching method
JPS58151028A (ja) * 1982-01-26 1983-09-08 マテリアルズ・リサ−チ・コ−ポレ−シヨン 磁気的に強められたプラズマ処理方法および装置
JPH0430177B2 (ja) * 1982-01-26 1992-05-21
JPS58170016A (ja) * 1982-03-31 1983-10-06 Tokuda Seisakusho Ltd プラズマエツチング装置
US4526643A (en) * 1983-03-24 1985-07-02 Tokyo Shibaura Denki Kabushiki Kaisha Dry etching apparatus using reactive ions
JPS62271432A (ja) * 1986-11-28 1987-11-25 Toshiba Corp ドライエツチング装置

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