JPS56160079A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56160079A
JPS56160079A JP5688180A JP5688180A JPS56160079A JP S56160079 A JPS56160079 A JP S56160079A JP 5688180 A JP5688180 A JP 5688180A JP 5688180 A JP5688180 A JP 5688180A JP S56160079 A JPS56160079 A JP S56160079A
Authority
JP
Japan
Prior art keywords
region
groove
separation
base body
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5688180A
Other languages
Japanese (ja)
Other versions
JPS6146071B2 (en
Inventor
Hisao Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP5688180A priority Critical patent/JPS56160079A/en
Publication of JPS56160079A publication Critical patent/JPS56160079A/en
Publication of JPS6146071B2 publication Critical patent/JPS6146071B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14654—Blooming suppression

Abstract

PURPOSE:To enable the arrangement of respective semiconductor elements close enough to each other and restrain the cross talk by a method wherein the respective semiconductor elements are separated by a separating means narrow in width, for example, a groove. CONSTITUTION:The groove 17 is formed by, for example, an etching on a separation region 13 along a pattern of the separation region 13 across the whole thickness of a region 15 in a base body 16 and a semiconductor layer 14 below the region 15, and the groove 17 separates the semiconductor layer 14 and the region 15 into parts 14a and 15a respectively. An antireflection film 18 having light transmissibility and electrical insulation, including, for example, the separation groove 17, is cover-attached on the surface of the region 15 on the base body 16.
JP5688180A 1980-04-29 1980-04-29 Semiconductor device Granted JPS56160079A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5688180A JPS56160079A (en) 1980-04-29 1980-04-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5688180A JPS56160079A (en) 1980-04-29 1980-04-29 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS56160079A true JPS56160079A (en) 1981-12-09
JPS6146071B2 JPS6146071B2 (en) 1986-10-11

Family

ID=13039751

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5688180A Granted JPS56160079A (en) 1980-04-29 1980-04-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56160079A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58106863A (en) * 1981-12-18 1983-06-25 Sanyo Electric Co Ltd Integration type semiconductor photo-receptor
JPS62232959A (en) * 1986-04-03 1987-10-13 Nissan Motor Co Ltd Semiconductor photodetector

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58106863A (en) * 1981-12-18 1983-06-25 Sanyo Electric Co Ltd Integration type semiconductor photo-receptor
JPS62232959A (en) * 1986-04-03 1987-10-13 Nissan Motor Co Ltd Semiconductor photodetector

Also Published As

Publication number Publication date
JPS6146071B2 (en) 1986-10-11

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