JPS56159894A - Storage device - Google Patents

Storage device

Info

Publication number
JPS56159894A
JPS56159894A JP6158680A JP6158680A JPS56159894A JP S56159894 A JPS56159894 A JP S56159894A JP 6158680 A JP6158680 A JP 6158680A JP 6158680 A JP6158680 A JP 6158680A JP S56159894 A JPS56159894 A JP S56159894A
Authority
JP
Japan
Prior art keywords
diodes
circuit
voltage
diode
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6158680A
Other languages
Japanese (ja)
Other versions
JPS6020837B2 (en
Inventor
Yasusuke Yamamoto
Hiroshi Miyanaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP55061586A priority Critical patent/JPS6020837B2/en
Publication of JPS56159894A publication Critical patent/JPS56159894A/en
Publication of JPS6020837B2 publication Critical patent/JPS6020837B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To make variations among lots and among chips in diode characteristics compensable by incorporating a circuit which has combined a diode having the same form as a load of a memory cell with a constant-current circuit into a circuit which controls read and write. CONSTITUTION:Reference voltage generating circuits 13, 14 comprising the same diodes D1, D4 a load diodes D2, D3 of a memory cell 11 and constant-current circuits I1, I5 are inserted into a circuit which controls read and write. Here, when voltage drops of diodes of transistors TR at the sides of on and off of cell 11 are taken as VN, VF respectively and a voltage drop when the reference current Ir is made to flow is taken as Vr, if the potential of a word line W<+> is equal to the reference voltage VR, a relation VN>Vr>VF holds, as it is, for a relation Vb2>Vr>Vb3 among the base potential Vb2, Vb3 of TRs T2, T3 and voltage Vr. Further even if the diode characteristics fluctuate among the tips, the characteristics of diodes D1, D4 also vary in similar manner, so that noise margin is always kept the same. Hereby variations among the chips of diode characteristics can be compensated.
JP55061586A 1980-05-09 1980-05-09 Storage device Expired JPS6020837B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55061586A JPS6020837B2 (en) 1980-05-09 1980-05-09 Storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55061586A JPS6020837B2 (en) 1980-05-09 1980-05-09 Storage device

Publications (2)

Publication Number Publication Date
JPS56159894A true JPS56159894A (en) 1981-12-09
JPS6020837B2 JPS6020837B2 (en) 1985-05-23

Family

ID=13175389

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55061586A Expired JPS6020837B2 (en) 1980-05-09 1980-05-09 Storage device

Country Status (1)

Country Link
JP (1) JPS6020837B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0084252A2 (en) * 1981-12-29 1983-07-27 Fujitsu Limited Semiconductor memory device
JPS59203297A (en) * 1983-05-04 1984-11-17 Hitachi Ltd Reference voltage generating circuit of semiconductor circuit
JPS60103584A (en) * 1983-11-11 1985-06-07 Nec Corp Semiconductor storage circuit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0084252A2 (en) * 1981-12-29 1983-07-27 Fujitsu Limited Semiconductor memory device
JPS59203297A (en) * 1983-05-04 1984-11-17 Hitachi Ltd Reference voltage generating circuit of semiconductor circuit
JPH0524595B2 (en) * 1983-05-04 1993-04-08 Hitachi Ltd
JPS60103584A (en) * 1983-11-11 1985-06-07 Nec Corp Semiconductor storage circuit

Also Published As

Publication number Publication date
JPS6020837B2 (en) 1985-05-23

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