JPS6433794A - Semiconductor storage device - Google Patents
Semiconductor storage deviceInfo
- Publication number
- JPS6433794A JPS6433794A JP18943387A JP18943387A JPS6433794A JP S6433794 A JPS6433794 A JP S6433794A JP 18943387 A JP18943387 A JP 18943387A JP 18943387 A JP18943387 A JP 18943387A JP S6433794 A JPS6433794 A JP S6433794A
- Authority
- JP
- Japan
- Prior art keywords
- resistance
- writing
- trt
- memory cell
- information
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE:To make current consumption constant and to align a writing quantity into a memory cell by changing the resistance value of a circuit for writing in accordance with the size of the source resistance of a memory cell, and aligning memory drain currents at the time of the writing of information. CONSTITUTION:By a column selecting transistor TRT 1 and the two pieces of the writing information of memory cells '0' and '1', a resistance R1 is inserted between a TRT 2 to supply a VPP potential for the writing and the TRT 1. Consequently, a circuit to write the information into a memory cell TC 1 consists of the TRT 1, the T2 and a resistance component R1. The resistance value of this resistance is reduced as the source resistance attached to the memory cell increases. That is, the resistance values are set to R1>R2; R4>R3; R2=R3. Here, the expression R2=R3 is formed because the sources of respective memory cells corresponding to this are mutually at the same distances.
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18943387A JPH0766676B2 (en) | 1987-07-29 | 1987-07-29 | Semiconductor memory device |
EP88112161A EP0301521B1 (en) | 1987-07-29 | 1988-07-27 | Nonvolatile semiconductor memory device |
DE91102850T DE3884820T2 (en) | 1987-07-29 | 1988-07-27 | Non-volatile semiconductor memory device. |
US07/224,953 US5010520A (en) | 1987-07-29 | 1988-07-27 | Nonvolatile semiconductor memory device with stabilized data write characteristic |
EP91102850A EP0441409B1 (en) | 1987-07-29 | 1988-07-27 | Nonvolatile semiconductor memory device |
DE8888112161T DE3874455T2 (en) | 1987-07-29 | 1988-07-27 | NON-VOLATILE SEMICONDUCTOR MEMORY. |
KR1019880009578A KR910007404B1 (en) | 1987-07-29 | 1988-07-29 | Nonvolatile semiconductor memory device |
US07/607,468 US5175704A (en) | 1987-07-29 | 1990-10-31 | Nonvolatile semiconductor memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18943387A JPH0766676B2 (en) | 1987-07-29 | 1987-07-29 | Semiconductor memory device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6433794A true JPS6433794A (en) | 1989-02-03 |
JPH0766676B2 JPH0766676B2 (en) | 1995-07-19 |
Family
ID=16241166
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18943387A Expired - Fee Related JPH0766676B2 (en) | 1987-07-29 | 1987-07-29 | Semiconductor memory device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0766676B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5468023B2 (en) * | 2009-02-06 | 2014-04-09 | パナソニック株式会社 | Nonvolatile semiconductor memory |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6054300U (en) * | 1983-09-20 | 1985-04-16 | 三洋電機株式会社 | Non-volatile memory read circuit |
-
1987
- 1987-07-29 JP JP18943387A patent/JPH0766676B2/en not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6054300U (en) * | 1983-09-20 | 1985-04-16 | 三洋電機株式会社 | Non-volatile memory read circuit |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5468023B2 (en) * | 2009-02-06 | 2014-04-09 | パナソニック株式会社 | Nonvolatile semiconductor memory |
Also Published As
Publication number | Publication date |
---|---|
JPH0766676B2 (en) | 1995-07-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5538016A (en) | Semiconductor memory device | |
EP0760516A3 (en) | Non-volatile multi-state memory device with memory cell capable of storing multi-state data | |
IT8223522A0 (en) | CONSTANT CURRENT GENERATOR CIRCUIT, WITH LOW SUPPLY VOLTAGE, CAN BE INTEGRATED MONOLITHICALLY. | |
JPS57109190A (en) | Semiconductor storage device and its manufacture | |
JPS56143587A (en) | Static type memory circuit | |
EP0328458A3 (en) | Semiconductor memory circuit | |
JPS54140843A (en) | Dynamic memory | |
JPS5517869A (en) | Semiconductor memory device | |
JPS6433794A (en) | Semiconductor storage device | |
JPS56140591A (en) | Semiconductor memeory device | |
JPS54162981A (en) | Semiconductor integrated circuit device | |
JPS6437798A (en) | Current detecting circuit for rom device | |
JPS55101191A (en) | Static random access memory cell circuit | |
JPS55160388A (en) | Semiconductor memory | |
JPS5379331A (en) | Semiconductor memory cell | |
JPS55117790A (en) | Memory circuit | |
JPS6479997A (en) | P-rom | |
JPS5712481A (en) | Semiconductor memory device | |
JPS5730190A (en) | Semiconductor storage device | |
JPS5788592A (en) | Semiconductor storage circuit device | |
JPS57164490A (en) | Semiconductor storage device | |
JPS5641590A (en) | Semiconductor memory unit | |
JPS56111185A (en) | Semiconductor integrated memory cell | |
JPS54149531A (en) | Memory circuit | |
JPS56163582A (en) | Integrated semiconductor storage device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |