JPS561571A - Manufacture of mos type semiconductor device - Google Patents

Manufacture of mos type semiconductor device

Info

Publication number
JPS561571A
JPS561571A JP7587179A JP7587179A JPS561571A JP S561571 A JPS561571 A JP S561571A JP 7587179 A JP7587179 A JP 7587179A JP 7587179 A JP7587179 A JP 7587179A JP S561571 A JPS561571 A JP S561571A
Authority
JP
Japan
Prior art keywords
region
film
substrate
isolation
conducting type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7587179A
Other languages
Japanese (ja)
Inventor
Takeshi Yamano
Junichi Mihashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7587179A priority Critical patent/JPS561571A/en
Publication of JPS561571A publication Critical patent/JPS561571A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To suppress the channel width dependency of the threshold voltage of an MOS type transistor by forming an isolation region of a central region having the same conducting type as the substrate and high density and an inversion region for surrounding the central region when isolating a plurality of active regions formed on a semiconductor substrate. CONSTITUTION:When isolating a plurality of active regions formed on a semiconductor substrate, an oxide film 2, a nitride film 3 and a PSG film 4 are laminated on the region to be isolated on the substrate 1, and the films 4 and 3 disposed on the isolation region is photoetched and removed. Then, with the residual film 4 as a mask reverse conducting type impurity ion to the substrate 1 is implanted to form an inversion region 5, heat treated at high temperature to form obliques at the ends of the film 4. Thereafter, the same conducting type impurity ion as the substrate 1 is implanted this time to form a high impurity density region 6 at the center of the region 5 and to retain the inversion region 5 on the periphery by utilizing the obliques at the ends of the film 4. Thereafter, isolation oxide film 7 is filled on the region to form an isolation region among elements.
JP7587179A 1979-06-15 1979-06-15 Manufacture of mos type semiconductor device Pending JPS561571A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7587179A JPS561571A (en) 1979-06-15 1979-06-15 Manufacture of mos type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7587179A JPS561571A (en) 1979-06-15 1979-06-15 Manufacture of mos type semiconductor device

Publications (1)

Publication Number Publication Date
JPS561571A true JPS561571A (en) 1981-01-09

Family

ID=13588754

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7587179A Pending JPS561571A (en) 1979-06-15 1979-06-15 Manufacture of mos type semiconductor device

Country Status (1)

Country Link
JP (1) JPS561571A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61125146A (en) * 1984-11-22 1986-06-12 Fujitsu Ltd Production of semiconductor device
JP2001196546A (en) * 1999-09-17 2001-07-19 Sony Corp Semiconductor device and manufacturing method therefor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61125146A (en) * 1984-11-22 1986-06-12 Fujitsu Ltd Production of semiconductor device
JP2001196546A (en) * 1999-09-17 2001-07-19 Sony Corp Semiconductor device and manufacturing method therefor
JP4686829B2 (en) * 1999-09-17 2011-05-25 ソニー株式会社 Semiconductor device and manufacturing method of semiconductor device

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