JPS561571A - Manufacture of mos type semiconductor device - Google Patents
Manufacture of mos type semiconductor deviceInfo
- Publication number
- JPS561571A JPS561571A JP7587179A JP7587179A JPS561571A JP S561571 A JPS561571 A JP S561571A JP 7587179 A JP7587179 A JP 7587179A JP 7587179 A JP7587179 A JP 7587179A JP S561571 A JPS561571 A JP S561571A
- Authority
- JP
- Japan
- Prior art keywords
- region
- film
- substrate
- isolation
- conducting type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 6
- 238000002955 isolation Methods 0.000 abstract 4
- 239000012535 impurity Substances 0.000 abstract 3
- 150000004767 nitrides Chemical class 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Element Separation (AREA)
Abstract
PURPOSE:To suppress the channel width dependency of the threshold voltage of an MOS type transistor by forming an isolation region of a central region having the same conducting type as the substrate and high density and an inversion region for surrounding the central region when isolating a plurality of active regions formed on a semiconductor substrate. CONSTITUTION:When isolating a plurality of active regions formed on a semiconductor substrate, an oxide film 2, a nitride film 3 and a PSG film 4 are laminated on the region to be isolated on the substrate 1, and the films 4 and 3 disposed on the isolation region is photoetched and removed. Then, with the residual film 4 as a mask reverse conducting type impurity ion to the substrate 1 is implanted to form an inversion region 5, heat treated at high temperature to form obliques at the ends of the film 4. Thereafter, the same conducting type impurity ion as the substrate 1 is implanted this time to form a high impurity density region 6 at the center of the region 5 and to retain the inversion region 5 on the periphery by utilizing the obliques at the ends of the film 4. Thereafter, isolation oxide film 7 is filled on the region to form an isolation region among elements.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7587179A JPS561571A (en) | 1979-06-15 | 1979-06-15 | Manufacture of mos type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7587179A JPS561571A (en) | 1979-06-15 | 1979-06-15 | Manufacture of mos type semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS561571A true JPS561571A (en) | 1981-01-09 |
Family
ID=13588754
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7587179A Pending JPS561571A (en) | 1979-06-15 | 1979-06-15 | Manufacture of mos type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS561571A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61125146A (en) * | 1984-11-22 | 1986-06-12 | Fujitsu Ltd | Production of semiconductor device |
JP2001196546A (en) * | 1999-09-17 | 2001-07-19 | Sony Corp | Semiconductor device and manufacturing method therefor |
-
1979
- 1979-06-15 JP JP7587179A patent/JPS561571A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61125146A (en) * | 1984-11-22 | 1986-06-12 | Fujitsu Ltd | Production of semiconductor device |
JP2001196546A (en) * | 1999-09-17 | 2001-07-19 | Sony Corp | Semiconductor device and manufacturing method therefor |
JP4686829B2 (en) * | 1999-09-17 | 2011-05-25 | ソニー株式会社 | Semiconductor device and manufacturing method of semiconductor device |
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