JPS56152235A - Impurity diffusing method - Google Patents

Impurity diffusing method

Info

Publication number
JPS56152235A
JPS56152235A JP5547080A JP5547080A JPS56152235A JP S56152235 A JPS56152235 A JP S56152235A JP 5547080 A JP5547080 A JP 5547080A JP 5547080 A JP5547080 A JP 5547080A JP S56152235 A JPS56152235 A JP S56152235A
Authority
JP
Japan
Prior art keywords
impurity
iii
group
substrate
group elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5547080A
Other languages
Japanese (ja)
Inventor
Hisao Saito
Yoshiharu Horikoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP5547080A priority Critical patent/JPS56152235A/en
Publication of JPS56152235A publication Critical patent/JPS56152235A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H01L21/2233—Diffusion into or out of AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To prevent the thermal deterioration of the surface of a substrate by introducing compounds of V group elements having the highest vapor pressure with an impurity and two-component compounds of all the combinations of III and V group elements into a closed tube when the impurity is diffused in the multielememt III-V group semiconductors in the closed tube. CONSTITUTION:When an impurity such as Cd or the like is diffused in multielement III-V group compound semiconductor 2 such as an InGaAsP or the like, a compound (Cd2P3)3 of an element (P) having the highest vapor pressure with an impurity (Cd) of V group elements forming the semiconductor and all two-component compounds (InP, InAs, GaP, GaAs)4, 5, 6, 7 of the combinations of the III and V group elements forming the semiconductor are introduced into a quartz ampule 1. Since the constituent elements may not be dissipated from the surface of the substrate by the heat treatment at the diffusing time in this manner, it can prevent the thermal deterioration of the surface of the substrate.
JP5547080A 1980-04-28 1980-04-28 Impurity diffusing method Pending JPS56152235A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5547080A JPS56152235A (en) 1980-04-28 1980-04-28 Impurity diffusing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5547080A JPS56152235A (en) 1980-04-28 1980-04-28 Impurity diffusing method

Publications (1)

Publication Number Publication Date
JPS56152235A true JPS56152235A (en) 1981-11-25

Family

ID=12999485

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5547080A Pending JPS56152235A (en) 1980-04-28 1980-04-28 Impurity diffusing method

Country Status (1)

Country Link
JP (1) JPS56152235A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5049524A (en) * 1989-02-28 1991-09-17 Industrial Technology Research Institute Cd diffusion in InP substrates

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4946375A (en) * 1972-09-05 1974-05-02

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4946375A (en) * 1972-09-05 1974-05-02

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5049524A (en) * 1989-02-28 1991-09-17 Industrial Technology Research Institute Cd diffusion in InP substrates

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