JPS56150850A - Manufacture of semiconductor integrated circuit - Google Patents

Manufacture of semiconductor integrated circuit

Info

Publication number
JPS56150850A
JPS56150850A JP5335080A JP5335080A JPS56150850A JP S56150850 A JPS56150850 A JP S56150850A JP 5335080 A JP5335080 A JP 5335080A JP 5335080 A JP5335080 A JP 5335080A JP S56150850 A JPS56150850 A JP S56150850A
Authority
JP
Japan
Prior art keywords
oxidized film
electrode
base
film
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5335080A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0222544B2 (enrdf_load_stackoverflow
Inventor
Minoru Taguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP5335080A priority Critical patent/JPS56150850A/ja
Publication of JPS56150850A publication Critical patent/JPS56150850A/ja
Publication of JPH0222544B2 publication Critical patent/JPH0222544B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0116—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including integrated injection logic [I2L]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Bipolar Integrated Circuits (AREA)
JP5335080A 1980-04-22 1980-04-22 Manufacture of semiconductor integrated circuit Granted JPS56150850A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5335080A JPS56150850A (en) 1980-04-22 1980-04-22 Manufacture of semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5335080A JPS56150850A (en) 1980-04-22 1980-04-22 Manufacture of semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS56150850A true JPS56150850A (en) 1981-11-21
JPH0222544B2 JPH0222544B2 (enrdf_load_stackoverflow) 1990-05-18

Family

ID=12940322

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5335080A Granted JPS56150850A (en) 1980-04-22 1980-04-22 Manufacture of semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS56150850A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5591656A (en) * 1991-09-24 1997-01-07 Matsushita Electronics Corporation, Ltd. Semiconductor integrated circuit device with self-aligned superhigh speed bipolar transistor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52117579A (en) * 1976-03-30 1977-10-03 Nec Corp Semiconductor device
JPS53142196A (en) * 1977-05-18 1978-12-11 Hitachi Ltd Bipolar type semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52117579A (en) * 1976-03-30 1977-10-03 Nec Corp Semiconductor device
JPS53142196A (en) * 1977-05-18 1978-12-11 Hitachi Ltd Bipolar type semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5591656A (en) * 1991-09-24 1997-01-07 Matsushita Electronics Corporation, Ltd. Semiconductor integrated circuit device with self-aligned superhigh speed bipolar transistor

Also Published As

Publication number Publication date
JPH0222544B2 (enrdf_load_stackoverflow) 1990-05-18

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