JPS5615063A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5615063A JPS5615063A JP9196879A JP9196879A JPS5615063A JP S5615063 A JPS5615063 A JP S5615063A JP 9196879 A JP9196879 A JP 9196879A JP 9196879 A JP9196879 A JP 9196879A JP S5615063 A JPS5615063 A JP S5615063A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- impurity density
- density layer
- substrate
- high impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000012535 impurity Substances 0.000 abstract 6
- 239000000758 substrate Substances 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9196879A JPS5615063A (en) | 1979-07-19 | 1979-07-19 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9196879A JPS5615063A (en) | 1979-07-19 | 1979-07-19 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5615063A true JPS5615063A (en) | 1981-02-13 |
Family
ID=14041331
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9196879A Pending JPS5615063A (en) | 1979-07-19 | 1979-07-19 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5615063A (ja) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6282577A (ja) * | 1985-10-06 | 1987-04-16 | Yoshiro Nakamatsu | 出入可能閉容器デイスク |
| JPS62202670U (ja) * | 1986-06-16 | 1987-12-24 | ||
| US5270567A (en) * | 1989-09-06 | 1993-12-14 | Casio Computer Co., Ltd. | Thin film transistors without capacitances between electrodes thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52153677A (en) * | 1976-06-16 | 1977-12-20 | Fujitsu Ltd | Sos type semiconductor device |
| JPS545635A (en) * | 1977-06-15 | 1979-01-17 | Fujitsu Ltd | Semiconductor memory device |
-
1979
- 1979-07-19 JP JP9196879A patent/JPS5615063A/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52153677A (en) * | 1976-06-16 | 1977-12-20 | Fujitsu Ltd | Sos type semiconductor device |
| JPS545635A (en) * | 1977-06-15 | 1979-01-17 | Fujitsu Ltd | Semiconductor memory device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6282577A (ja) * | 1985-10-06 | 1987-04-16 | Yoshiro Nakamatsu | 出入可能閉容器デイスク |
| JPS62202670U (ja) * | 1986-06-16 | 1987-12-24 | ||
| US5270567A (en) * | 1989-09-06 | 1993-12-14 | Casio Computer Co., Ltd. | Thin film transistors without capacitances between electrodes thereof |
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