JPS56147470A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56147470A
JPS56147470A JP5086380A JP5086380A JPS56147470A JP S56147470 A JPS56147470 A JP S56147470A JP 5086380 A JP5086380 A JP 5086380A JP 5086380 A JP5086380 A JP 5086380A JP S56147470 A JPS56147470 A JP S56147470A
Authority
JP
Japan
Prior art keywords
oxide
becomes
constitution
compound
mixture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5086380A
Other languages
Japanese (ja)
Inventor
Yoshihiko Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5086380A priority Critical patent/JPS56147470A/en
Publication of JPS56147470A publication Critical patent/JPS56147470A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a high-integrated RAM, by depositing a mixture or compound of metals such as Ta, Ti, and the like which can be oxidized by a positive electrode and is hard to be dissolved, and Si, Ge, and the like, on an Si, Ge, or Ga-As substrate. CONSTITUTION:The compound or the mixture of Ta and Si is deposited on the substrate of Si and the like. Said oxide has a dielectric constant which is twice that of SiO2 even though it contains 60% or more Si. The oxide becomes a noncrystalline material when Si becomes 15% or more. With the increase in percentage of Si, the oxide becomes similar to poly Si. Therefore, the positive-electrode oxidation can be readily achieved and a metal oxide semiconductor with a desired shape can be obtained with good reproducibility being provided. 10% or more Si is effective in the practical uses. In this constitution, the compact and large-capacity RAM having excellent performance, which is suitable for LSI, can be manufactured with a high yield rate.
JP5086380A 1980-04-17 1980-04-17 Semiconductor device Pending JPS56147470A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5086380A JPS56147470A (en) 1980-04-17 1980-04-17 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5086380A JPS56147470A (en) 1980-04-17 1980-04-17 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56147470A true JPS56147470A (en) 1981-11-16

Family

ID=12870552

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5086380A Pending JPS56147470A (en) 1980-04-17 1980-04-17 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56147470A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5810855A (en) * 1981-07-14 1983-01-21 Fujitsu Ltd Semiconductor device
JPS58220457A (en) * 1982-06-11 1983-12-22 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of forming dielectric material
JPS594152A (en) * 1982-06-30 1984-01-10 Fujitsu Ltd Manufacture of semiconductor device
JPS5978553A (en) * 1982-10-27 1984-05-07 Hitachi Ltd Capacitor and manufacture thereof
JPS5982758A (en) * 1982-11-02 1984-05-12 Nec Corp Semiconductor device having desirable capacity part
JPS6050950A (en) * 1983-08-29 1985-03-22 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of producing dielectric material
JPS6072261A (en) * 1983-09-28 1985-04-24 Fujitsu Ltd Semiconductor memory
JPS60111451A (en) * 1983-11-21 1985-06-17 Toshiba Corp Semiconductor device and manufacture thereof
JPS62133748A (en) * 1985-12-05 1987-06-16 Matsushita Electronics Corp Manufacture of semiconductor device
JP2002314067A (en) * 2001-04-13 2002-10-25 Toshiba Corp Semiconductor device and manufacturing method of mis- type field effect transistor
US7115533B2 (en) 2001-12-18 2006-10-03 Matsushita Electric Industrial Co., Ltd. Semiconductor device manufacturing method
JP2013093589A (en) * 1998-03-12 2013-05-16 Alcatel-Lucent Usa Inc Individual element including dielectric materials or integrated circuit device including semiconductor device

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5810855A (en) * 1981-07-14 1983-01-21 Fujitsu Ltd Semiconductor device
JPH0379869B2 (en) * 1982-06-11 1991-12-20 Intaanashonaru Bijinesu Mashiinzu Corp
JPS58220457A (en) * 1982-06-11 1983-12-22 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of forming dielectric material
JPS594152A (en) * 1982-06-30 1984-01-10 Fujitsu Ltd Manufacture of semiconductor device
JPS5978553A (en) * 1982-10-27 1984-05-07 Hitachi Ltd Capacitor and manufacture thereof
JPS5982758A (en) * 1982-11-02 1984-05-12 Nec Corp Semiconductor device having desirable capacity part
JPS6050950A (en) * 1983-08-29 1985-03-22 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of producing dielectric material
JPS6072261A (en) * 1983-09-28 1985-04-24 Fujitsu Ltd Semiconductor memory
JPH04598B2 (en) * 1983-09-28 1992-01-08 Fujitsu Ltd
JPS60111451A (en) * 1983-11-21 1985-06-17 Toshiba Corp Semiconductor device and manufacture thereof
JPS62133748A (en) * 1985-12-05 1987-06-16 Matsushita Electronics Corp Manufacture of semiconductor device
JP2013093589A (en) * 1998-03-12 2013-05-16 Alcatel-Lucent Usa Inc Individual element including dielectric materials or integrated circuit device including semiconductor device
JP2002314067A (en) * 2001-04-13 2002-10-25 Toshiba Corp Semiconductor device and manufacturing method of mis- type field effect transistor
US7115533B2 (en) 2001-12-18 2006-10-03 Matsushita Electric Industrial Co., Ltd. Semiconductor device manufacturing method

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