JPS56142639A - Photo-etching technique jointly using electron ray exposure and ultraviolet ray exposure - Google Patents

Photo-etching technique jointly using electron ray exposure and ultraviolet ray exposure

Info

Publication number
JPS56142639A
JPS56142639A JP4666180A JP4666180A JPS56142639A JP S56142639 A JPS56142639 A JP S56142639A JP 4666180 A JP4666180 A JP 4666180A JP 4666180 A JP4666180 A JP 4666180A JP S56142639 A JPS56142639 A JP S56142639A
Authority
JP
Japan
Prior art keywords
rays
exposure
electron
exposed
ultraviolet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4666180A
Other languages
Japanese (ja)
Other versions
JPS639655B2 (en
Inventor
Yasuo Iida
Katsumi Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4666180A priority Critical patent/JPS56142639A/en
Publication of JPS56142639A publication Critical patent/JPS56142639A/en
Publication of JPS639655B2 publication Critical patent/JPS639655B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To form a minute pattern in a complicate shape by a method wherein a positive resist for ultraviolt rays exposure also sensing electron rays is applied on a semiconductor substrate, and the substrate is exposed in a shape that electron rays and ulraviolet rays are jointly used and both advantages are utilized. CONSTITUTION:A positive resist 102 for ultraviolet rays exposure also sensing electron rays such as AZ-2400 is applied on a silicon substrate 101, electron rays are irradiated and latent images corresponding to a minute pattern are formed. The substrate is exposed only for 20sec., the difference of 60sec. optimum developing time in exposure by electron rays and 40sec. optimum developing time in exposure by ultraviolet rays, by using a 1% aqueous solution of caustic potash, and a mask 104 for ultraviolet rays is matched and the substrate is exposed by ultraviolet rays only for 40sec. Thus, an electron rays exposed section entering an ultraviolet exposed mask pattern is developed completely while the resist of the outside of the pattern is removed including the electron rays exposed section, and exposure utilizing both advantages of electron rays and ultraviolet rays is conducted.
JP4666180A 1980-04-09 1980-04-09 Photo-etching technique jointly using electron ray exposure and ultraviolet ray exposure Granted JPS56142639A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4666180A JPS56142639A (en) 1980-04-09 1980-04-09 Photo-etching technique jointly using electron ray exposure and ultraviolet ray exposure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4666180A JPS56142639A (en) 1980-04-09 1980-04-09 Photo-etching technique jointly using electron ray exposure and ultraviolet ray exposure

Publications (2)

Publication Number Publication Date
JPS56142639A true JPS56142639A (en) 1981-11-07
JPS639655B2 JPS639655B2 (en) 1988-03-01

Family

ID=12753511

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4666180A Granted JPS56142639A (en) 1980-04-09 1980-04-09 Photo-etching technique jointly using electron ray exposure and ultraviolet ray exposure

Country Status (1)

Country Link
JP (1) JPS56142639A (en)

Also Published As

Publication number Publication date
JPS639655B2 (en) 1988-03-01

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