JPS5613782A - Preparation of semiconductor device - Google Patents

Preparation of semiconductor device

Info

Publication number
JPS5613782A
JPS5613782A JP8915779A JP8915779A JPS5613782A JP S5613782 A JPS5613782 A JP S5613782A JP 8915779 A JP8915779 A JP 8915779A JP 8915779 A JP8915779 A JP 8915779A JP S5613782 A JPS5613782 A JP S5613782A
Authority
JP
Japan
Prior art keywords
mask
spherical
crystal
layer
applying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8915779A
Other languages
Japanese (ja)
Other versions
JPS6335114B2 (en
Inventor
Osamu Wada
Tatsuyuki Sanada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8915779A priority Critical patent/JPS5613782A/en
Publication of JPS5613782A publication Critical patent/JPS5613782A/en
Publication of JPS6335114B2 publication Critical patent/JPS6335114B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate

Abstract

PURPOSE:To obtain a spherical surface of good shape when making a semiconductor crystal surface into an isotropic spherical shape, by forming a hemispherical mask of an organic substance coating on the central surface of the crystal and applying ion beam etching through said mask to transcriber the spherical shape of the mask to the crystal. CONSTITUTION:When making a semiconductor light emitting element, photoresist film 32 is applied all over the light take-out surface of a semiconductor crystal layer 31, and the film 32 is changed into an almost circular pattern mask 32' by applying exposing and developing treatment. Next, applying heat in the nonoxidizing atmosphere to such an extent that the mask will not burn, for baking the element, the mask 32' is changed into a spherical shaped mask 32'' by its surface tension. Next, by projecting the ion beams of an inactive gas such as Ar and continuing the etching until the mask 32'' disappears completely, the spherical shape of the mask 32'' is transcribed to the surface of the layer 31. If necessary, the layer 31 is rotated and the beams are projected from above diagonally. By so doing, a hemisphere of good shape can be obtained and connection with light fibers can be improved.
JP8915779A 1979-07-13 1979-07-13 Preparation of semiconductor device Granted JPS5613782A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8915779A JPS5613782A (en) 1979-07-13 1979-07-13 Preparation of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8915779A JPS5613782A (en) 1979-07-13 1979-07-13 Preparation of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5613782A true JPS5613782A (en) 1981-02-10
JPS6335114B2 JPS6335114B2 (en) 1988-07-13

Family

ID=13962997

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8915779A Granted JPS5613782A (en) 1979-07-13 1979-07-13 Preparation of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5613782A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63197382A (en) * 1987-02-12 1988-08-16 Hitachi Ltd Manufacture of dome-like structure
JPH05136460A (en) * 1991-06-19 1993-06-01 Matsushita Electric Ind Co Ltd Formation of microlens
JPH07205354A (en) * 1994-01-17 1995-08-08 Masayuki Ogawa Rubber mat
US5608577A (en) * 1991-08-30 1997-03-04 Mitsui Petrochemical Industries, Ltd. Optical mirror and optical device using the same
US5999325A (en) * 1991-06-21 1999-12-07 Mitsui Chemicals, Inc. Optical device and method of manufacturing the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63197382A (en) * 1987-02-12 1988-08-16 Hitachi Ltd Manufacture of dome-like structure
JPH0586076B2 (en) * 1987-02-12 1993-12-09 Hitachi Ltd
JPH05136460A (en) * 1991-06-19 1993-06-01 Matsushita Electric Ind Co Ltd Formation of microlens
US5999325A (en) * 1991-06-21 1999-12-07 Mitsui Chemicals, Inc. Optical device and method of manufacturing the same
US5608577A (en) * 1991-08-30 1997-03-04 Mitsui Petrochemical Industries, Ltd. Optical mirror and optical device using the same
JPH07205354A (en) * 1994-01-17 1995-08-08 Masayuki Ogawa Rubber mat

Also Published As

Publication number Publication date
JPS6335114B2 (en) 1988-07-13

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