JPS56137661A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56137661A
JPS56137661A JP4041980A JP4041980A JPS56137661A JP S56137661 A JPS56137661 A JP S56137661A JP 4041980 A JP4041980 A JP 4041980A JP 4041980 A JP4041980 A JP 4041980A JP S56137661 A JPS56137661 A JP S56137661A
Authority
JP
Japan
Prior art keywords
zone
wiring
uniform
temperature
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4041980A
Other languages
Japanese (ja)
Other versions
JPS6214102B2 (en
Inventor
Shintaro Ito
Hajime Sawazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP4041980A priority Critical patent/JPS56137661A/en
Publication of JPS56137661A publication Critical patent/JPS56137661A/en
Publication of JPS6214102B2 publication Critical patent/JPS6214102B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/345—Arrangements for heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PURPOSE:To make the thermal effect of a heating element work on each element uniformly by providing a heat harnessing zone in either of intercircuit element spaces distributed under electric insulation on the same semiconductor substrate. CONSTITUTION:A transistor 1 on a silicon substrate 0 is a heating source and transistors 2, 3 requiring pairing properties have a heat harnessing zone 4 as if to shield the side of an element 1. This heat harnessing zone is provided on a silicon dioxide 5 and materials of higher function than the former. If wiring for the element is of polysilicon, the said zone shall be separately evaporated with aluminium and if the said wiring is of aluminium, the zone shall be separately added with copper film. In addition, if the zone is of the same material as element wiring, the width and thickness of the zone shall be increased. As a result, the entire temperature is uniform and the elements 2, 3 making a pair have a uniform temperature, thus compensating for a disavantage of arrangement conditions. The heat harnessing zone can be a groove which reduces heat conductivity, change temperature conditions and making the temperature uniform.
JP4041980A 1980-03-31 1980-03-31 Semiconductor device Granted JPS56137661A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4041980A JPS56137661A (en) 1980-03-31 1980-03-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4041980A JPS56137661A (en) 1980-03-31 1980-03-31 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS56137661A true JPS56137661A (en) 1981-10-27
JPS6214102B2 JPS6214102B2 (en) 1987-03-31

Family

ID=12580129

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4041980A Granted JPS56137661A (en) 1980-03-31 1980-03-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56137661A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999003147A1 (en) * 1997-07-10 1999-01-21 Telefonaktiebolaget Lm Ericsson Thermally insulated integrated circuits
CN100369250C (en) * 2003-09-02 2008-02-13 罗姆股份有限公司 Semiconductor integrated circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999003147A1 (en) * 1997-07-10 1999-01-21 Telefonaktiebolaget Lm Ericsson Thermally insulated integrated circuits
CN100369250C (en) * 2003-09-02 2008-02-13 罗姆股份有限公司 Semiconductor integrated circuit

Also Published As

Publication number Publication date
JPS6214102B2 (en) 1987-03-31

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