JPS56137639A - Decompression vapor growth device - Google Patents

Decompression vapor growth device

Info

Publication number
JPS56137639A
JPS56137639A JP4051580A JP4051580A JPS56137639A JP S56137639 A JPS56137639 A JP S56137639A JP 4051580 A JP4051580 A JP 4051580A JP 4051580 A JP4051580 A JP 4051580A JP S56137639 A JPS56137639 A JP S56137639A
Authority
JP
Japan
Prior art keywords
tube
substrate
pipe
reaction
psg
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4051580A
Other languages
English (en)
Inventor
Masao Honda
Kazuhiro Nakao
Hiromitsu Mishimagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP4051580A priority Critical patent/JPS56137639A/ja
Publication of JPS56137639A publication Critical patent/JPS56137639A/ja
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
JP4051580A 1980-03-31 1980-03-31 Decompression vapor growth device Pending JPS56137639A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4051580A JPS56137639A (en) 1980-03-31 1980-03-31 Decompression vapor growth device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4051580A JPS56137639A (en) 1980-03-31 1980-03-31 Decompression vapor growth device

Publications (1)

Publication Number Publication Date
JPS56137639A true JPS56137639A (en) 1981-10-27

Family

ID=12582657

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4051580A Pending JPS56137639A (en) 1980-03-31 1980-03-31 Decompression vapor growth device

Country Status (1)

Country Link
JP (1) JPS56137639A (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58168240A (ja) * 1982-03-30 1983-10-04 Fujitsu Ltd 半導体装置
JPS60189928A (ja) * 1984-03-12 1985-09-27 Fujitsu Ltd 減圧気相成長装置
JPS615515A (ja) * 1984-06-07 1986-01-11 Fujitsu Ltd 化学気相成長装置
JPS61158947U (ja) * 1985-03-26 1986-10-02
JPH02142525U (ja) * 1990-05-10 1990-12-04
WO1993006619A1 (en) * 1991-09-27 1993-04-01 Komatsu Electronic Metals Co., Ltd. Apparatus for introducing gas, and apparatus and method for epitaxial growth

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58168240A (ja) * 1982-03-30 1983-10-04 Fujitsu Ltd 半導体装置
JPS60189928A (ja) * 1984-03-12 1985-09-27 Fujitsu Ltd 減圧気相成長装置
JPS615515A (ja) * 1984-06-07 1986-01-11 Fujitsu Ltd 化学気相成長装置
JPS61158947U (ja) * 1985-03-26 1986-10-02
JPH0530351Y2 (ja) * 1985-03-26 1993-08-03
JPH02142525U (ja) * 1990-05-10 1990-12-04
WO1993006619A1 (en) * 1991-09-27 1993-04-01 Komatsu Electronic Metals Co., Ltd. Apparatus for introducing gas, and apparatus and method for epitaxial growth

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