JPS61158947U - - Google Patents

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Publication number
JPS61158947U
JPS61158947U JP4337485U JP4337485U JPS61158947U JP S61158947 U JPS61158947 U JP S61158947U JP 4337485 U JP4337485 U JP 4337485U JP 4337485 U JP4337485 U JP 4337485U JP S61158947 U JPS61158947 U JP S61158947U
Authority
JP
Japan
Prior art keywords
reaction
susceptor
gas
phase growth
vapor phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4337485U
Other languages
English (en)
Other versions
JPH0530351Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1985043374U priority Critical patent/JPH0530351Y2/ja
Publication of JPS61158947U publication Critical patent/JPS61158947U/ja
Application granted granted Critical
Publication of JPH0530351Y2 publication Critical patent/JPH0530351Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Description

【図面の簡単な説明】
第１図は本考案の気相成長装置の縦断面図、第
２図は第１図のＡ―Ａ線断面図、第３図ａは従来
の気相成長装置の縦断面図、第３図ｂは第３図ａ
のＢ―Ｂ線断面図である。 １…ステンレス鋼製ベルジヤ、２…加熱台、３
…サセプタ、４…半導体ウエハ、５…反応ガス供
給管、６…ＵＶ光源ランプ、７…照射窓、８…排
気管。

Claims (1)

    【実用新案登録請求の範囲】
  1. ベルジヤ内に設けられた加熱台上のサセプタに
    載置されて加熱された半導体ウエハに、特定の波
    長の光を照射した反応ガスを接触させ光化学反応
    させて気相成長せしめ、反応後のガスを排気管よ
    り排気させるようにした気相成長装置において、
    着脱自在で、かつ回転可能な円板形サセプタと、
    サセプタ中心部・両端部の各領域ごとに独立して
    反応ガスを供給する反応ガス供給管と、反応後の
    ガスを各領域ごとに独立して排気する排気管とを
    有することを特徴とする気相成長装置。
JP1985043374U 1985-03-26 1985-03-26 Expired - Lifetime JPH0530351Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1985043374U JPH0530351Y2 (ja) 1985-03-26 1985-03-26

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1985043374U JPH0530351Y2 (ja) 1985-03-26 1985-03-26

Publications (2)

Publication Number Publication Date
JPS61158947U true JPS61158947U (ja) 1986-10-02
JPH0530351Y2 JPH0530351Y2 (ja) 1993-08-03

Family

ID=30554984

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1985043374U Expired - Lifetime JPH0530351Y2 (ja) 1985-03-26 1985-03-26

Country Status (1)

Country Link
JP (1) JPH0530351Y2 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02291114A (ja) * 1989-04-29 1990-11-30 Toyoda Gosei Co Ltd 化合物半導体膜の気相成長装置
WO1993006619A1 (en) * 1991-09-27 1993-04-01 Komatsu Electronic Metals Co., Ltd. Apparatus for introducing gas, and apparatus and method for epitaxial growth

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55121650A (en) * 1979-03-14 1980-09-18 Pioneer Electronic Corp Cvd device
JPS5678497A (en) * 1979-11-27 1981-06-27 Fujitsu Ltd Vapor growth apparatus
JPS56137639A (en) * 1980-03-31 1981-10-27 Chiyou Lsi Gijutsu Kenkyu Kumiai Decompression vapor growth device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55121650A (en) * 1979-03-14 1980-09-18 Pioneer Electronic Corp Cvd device
JPS5678497A (en) * 1979-11-27 1981-06-27 Fujitsu Ltd Vapor growth apparatus
JPS56137639A (en) * 1980-03-31 1981-10-27 Chiyou Lsi Gijutsu Kenkyu Kumiai Decompression vapor growth device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02291114A (ja) * 1989-04-29 1990-11-30 Toyoda Gosei Co Ltd 化合物半導体膜の気相成長装置
WO1993006619A1 (en) * 1991-09-27 1993-04-01 Komatsu Electronic Metals Co., Ltd. Apparatus for introducing gas, and apparatus and method for epitaxial growth

Also Published As

Publication number Publication date
JPH0530351Y2 (ja) 1993-08-03

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