JPS5613722A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5613722A
JPS5613722A JP8952579A JP8952579A JPS5613722A JP S5613722 A JPS5613722 A JP S5613722A JP 8952579 A JP8952579 A JP 8952579A JP 8952579 A JP8952579 A JP 8952579A JP S5613722 A JPS5613722 A JP S5613722A
Authority
JP
Japan
Prior art keywords
resin film
injection
mask
semiconductor substrate
high molecular
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8952579A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6117135B2 (zh
Inventor
Kazuhiko Tsuji
Shigetoshi Takayanagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP8952579A priority Critical patent/JPS5613722A/ja
Publication of JPS5613722A publication Critical patent/JPS5613722A/ja
Publication of JPS6117135B2 publication Critical patent/JPS6117135B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
JP8952579A 1979-07-13 1979-07-13 Manufacture of semiconductor device Granted JPS5613722A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8952579A JPS5613722A (en) 1979-07-13 1979-07-13 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8952579A JPS5613722A (en) 1979-07-13 1979-07-13 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5613722A true JPS5613722A (en) 1981-02-10
JPS6117135B2 JPS6117135B2 (zh) 1986-05-06

Family

ID=13973214

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8952579A Granted JPS5613722A (en) 1979-07-13 1979-07-13 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5613722A (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS599981A (ja) * 1982-07-07 1984-01-19 Sumitomo Electric Ind Ltd 半導体発光装置
EP0851468A2 (en) * 1996-12-31 1998-07-01 Lucent Technologies Inc. Method of making integrated circuit with twin tub
CN100382246C (zh) * 2003-04-25 2008-04-16 住友电气工业株式会社 半导体装置的制造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0318619A (ja) * 1989-06-14 1991-01-28 Nissan Motor Co Ltd 渦流室式ディーゼル機関の燃焼室

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS599981A (ja) * 1982-07-07 1984-01-19 Sumitomo Electric Ind Ltd 半導体発光装置
EP0851468A2 (en) * 1996-12-31 1998-07-01 Lucent Technologies Inc. Method of making integrated circuit with twin tub
EP0851468A3 (en) * 1996-12-31 1998-08-05 Lucent Technologies Inc. Method of making integrated circuit with twin tub
US6017787A (en) * 1996-12-31 2000-01-25 Lucent Technologies Inc. Integrated circuit with twin tub
CN100382246C (zh) * 2003-04-25 2008-04-16 住友电气工业株式会社 半导体装置的制造方法
US7364978B2 (en) 2003-04-25 2008-04-29 Sumitomo Electric Industries, Ltd. Method of fabricating semiconductor device
US7759211B2 (en) 2003-04-25 2010-07-20 Sumitomo Electric Industries, Ltd. Method of fabricating semiconductor device

Also Published As

Publication number Publication date
JPS6117135B2 (zh) 1986-05-06

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